Holographic offset launch for dynamic optimization and characterization of multimode fiber bandwidth

Optimization of the bandwidth of a 2 km 50 μm multimode fiber at 850 nm is investigated theoretically and experimentally by steering a single spot, or two in antiphase spots across the core of the fiber in two dimensions using a ferroelectric liquid-crystal-based spatial light modulator. This method not only allows an optimal offset launch position to be chosen in situ but can also characterize the geometry and position of the core, identify defects, and measure the maximum differential mode delay. Its ability to selectively excite specific mode groups is also of relevance to mode-group division multiplexing. © 2012 IEEE.

Production and characterization of a hydraulic microactuator

In order to improve the power density of microactuators, recent research focuses on the applicability of fluidic actuation at the microscale. The main encountered difficulties in the development of small fluidic actuators are related to production tolerances and assembly requirements. In addition, these actuators tend to comprise highly three-dimensional parts, which are incompatible with traditional microproduction technologies. This paper presents accurate production and novel assembly techniques for the development of a hydraulic microactuator. Some of the presented techniques are widespread in precision mechanics, but have not yet been introduced in micromechanics. A prototype hydraulic microactuator with a bore of 1 mm and a length of 13 mm has been fabricated and tested. Measurements showed that this actuator is able to generate a force density of more than 0.23 N mm-2 and a work density of 0.18 mJ mm-3 at a driving pressure of 550 kPa, which is remarkable considering the small dimensions of the actuator. © 2005 IOP Publishing Ltd.

High purity GaAs nanowires free of planar defects: Growth and characterization

We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

Design, fabrication, and characterization of circular Dammann gratings based on grayscale lithography.

We describe the design, fabrication, and experimental demonstration of a circular Dammann grating element generating a point-spread function of two concentric rings with equal intensity. The element was fabricated using grayscale lithography, providing a smooth and accurate phase profile. As a result, we obtained high diffraction efficiency and good uniformity between the two rings.

Design, fabrication and characterization of spatial mode selector in silicon

We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. © 2009 Optical Society of America.

Design, fabrication and characterization of spatial mode selector in silicon

We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. © 2009 Optical Society of America.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.