158 resultados para Electrical bias


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Capacitive parasitic feedthrough is an impediment that is inherent to all electrically interfaced micron scale resonant devices, resulting in increased challenges to their integration in more complex circuits, particularly as devices are scaled to operate at higher frequencies for RF applications. In this paper, a technique to cancel the undesirable effects of capacitive feedthrough that was previously proposed is here developed for an on-chip implementation. The method reported in this paper benefits from the simplicity of its implementation, and its effectiveness is demonstrated in this paper. This technique is demonstrated for two disk-plate resonators that have been excited in the wine glass mode at 5.4 MHz, though applicable to almost any electrically interfaced resonator. Measurements of the electrical transmission from these resonators show that the magnitude of the frequency response of the system is enhanced by up to 19 dB, while the phase is found to shift through a full 180° about the resonant frequency. This method is proposed as a useful addition to other techniques for enhancing the measured response of electrostatic micromechanical resonators. © 2009 Elsevier B.V. All rights reserved.

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This paper reports the design and electrical characterization of a micromechanical disk resonator fabricated in single crystal silicon using a foundry SOI micromachining process. The microresonator has been selectively excited in the radial extensional and the wine glass modes by reversing the polarity of the DC bias voltage applied on selected drive electrodes around the resonant structure. The quality factor of the resonator vibrating in the radial contour mode was 8000 at a resonant frequency of 6.34 MHz at pressure below 10 mTorr vacuum. The highest measured quality factor of the resonator in the wine glass resonant mode was 1.9 × 106 using a DC bias voltage of 20 V at about the same pressure in vacuum; the resonant frequency was 5.43 MHz and the lowest motional resistance measured was approximately 17 kΩ using a DC bias voltage of 60 V applied across 2.7 μm actuation gaps. This corresponds to a resonant frequency-quality factor (f-Q) product of 1.02 × 1013, among the highest reported for single crystal silicon microresonators, and on par with the best quartz crystal resonators. The quality factor for the wine glass mode in air was approximately 10,000. © 2009 Elsevier B.V. All rights reserved.

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This paper reports on the design and electrical characterization of a single crystal silicon micromechanical square-plate resonator. The microresonator has been excited in the anti-symmetrical wine glass mode at a resonant frequency of 5.166 MHz and exhibits an impressive quality factor (Q) of 3.7 × 106 at a pressure of 33 mtorr. The device has been fabricated in a commercial foundry process. An associated motional resistance of approximately 50 kΩ using a dc bias voltage of 60 V is measured for a transduction gap of 2 νm due to the ultra-high Q of the resonator. This result corresponds to a frequency-Q product of 1.9 × 1013, the highest reported for a fundamental mode single-crystal silicon resonator and on par with some of the best quartz crystal resonators. The results are indicative of the superior performance of silicon as a mechanical material, and show that the wine glass resonant mode is beneficial for achieving high quality factors allowed by the material limit. © 2009 IOP Publishing Ltd.

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The development of the Nanolith parallel electron-beam writing head was discussed. The fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in the lithographic system were described. The microcathode exhibited a peak current of 10.5 μA at 48 V when operated with a duty cycle of 0.5 percent.

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Plasma enhanced chemical vapour deposition (PECVD) is a controlled technique for the production of vertically aligned multiwall carbon nanotubes for field emission applications. In this paper, we investigate the electrical properties of individual carbon nanotubes which is important for designing field emission devices. PECVD nanotubes exhibit a room temperature resistance of 1-10 kΩ/μm length (resistivity 10-6 to 10-5 Ω m) and have a maximum current carrying capability of 0.2-2 mA (current density 107-108 A/cm2). The field emission characteristics show that the field enhancement of the structures is strongly related to the geometry (height/radius) of the structures and maximum emission currents of ∼ 10 μA were obtained. The failure of nanotubes under field emission is also discussed. © 2002 Elsevier Science B.V. All rights reserved.

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http://www.medphys.org/PhDAbstracts/ Abstracted in Medical Physics Journal