Directional algebraic reconstruction technique for electrical impedance tomography

We assume that the resistance matrix can be found in electrical impedance tomography from the assumption of linear dependence between the voltages and the currents and with the help of the resistance matrix and the transfer impedance between the electrodes, a directional algebraic reconstruction technique is proposed. The goal is to reconstruct the resistivity distribution by weighting the matrices that are obtained by calculating the orthogonal distance of the underlying mesh elements from the neighbouring port resistivity lines. These weighting matrices, which only depend on the topology of the underlying mesh, can be calculated offline and result in a computationally efficient online procedure with a reasonable image reconstruction performance. Simulation results are provided to validate this approach.

High sensitive NO2 gas sensor with low power consumption using selectively grown ZnO nanorods.

The noble gas sensor using multiple ZnO nanorods was fabricated with CMOS compatible process and sol-gel growth method on selective area and gas response characteristics to NO2 gas of the sensor device were investigated. We confirmed the sensors had high sensitive response denoted by the sensitivity of several tens for NO2 gas sensing and also showed pretty low power consumption close to 20 mW even though the recovery of resistance come up to almost the initial value.

Carbon nanotube array: a new MIP platform.

Here we demonstrate that a free-standing carbon nanotube (CNT) array can be used as a large surface area and high porosity 3D platform for molecular imprinted polymer (MIP), especially for surface imprinting. The thickness of polymer grafted around each CNT can be fine-tuned to imprint different sizes of target molecules, and yet it can be thin enough to expose every imprint site to the target molecules in solution without sacrificing the capacity of binding sites. The performance of this new CNT-MIP architecture was first assessed with a caffeine-imprinted polypyrrole (PPy) coating on two types of CNT arrays: sparse and dense CNTs. Real-time pulsed amperometric detection was used to study the rebinding of the caffeine molecules onto these CNT-MIPPy sensors. The dense CNT-MIPPy sensor presented the highest sensitivity, about 15 times better when compared to the conventional thin film, whereas an improvement of 3.6 times was recorded on the sparse CNT. However, due to the small tube-to-tube spacing in the dense CNT array, electrode fouling was observed during the detection of concentrated caffeine in phosphate buffer solution. A new I-V characterization method using pulsed amperometry was introduced to investigate the electrical characterization of these new devices. The resistance value derived from the I-V plot provides insight into the electrical conductivity of the CNT transducer and also the effective surface area for caffeine imprinting.

Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform

Here we report on the successful low-temperature growth of zinc oxide nanowires (ZnONWs) on silicon-on-insulator (SOI) CMOS micro-hotplates and their response, at different operating temperatures, to hydrogen in air. The SOI micro-hotplates were fabricated in a commercial CMOS foundry followed by a deep reactive ion etch (DRIE) in a MEMS foundry to form ultra-low power membranes. The micro-hotplates comprise p+ silicon micro-heaters and interdigitated metal electrodes (measuring the change in resistance of the gas sensitive nanomaterial). The ZnONWs were grown as a post-CMOS process onto the hotplates using a CMOS friendly hydrothermal method. The ZnONWs showed a good response to 500 to 5000 ppm of hydrogen in air. We believe that the integration of ZnONWs with a MEMS platform results in a low power, low cost, hydrogen sensor that would be suitable for handheld battery-operated gas sensors. © 2011 Published by Elsevier Ltd.

Electrical conduction and optical properties of doped silicon-on-insulator photonic crystals

We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Diesel smoke transient control using a real-time smoke sensor

A novel real time smoke sensor is described, which is mounted in the exhaust manifold and detects the smoke by virtue of the natural electrical charge which is carried on the smoke. The somewhat obscure origin of the charge on the smoke is briefly considered, as well as the operation of the sensor itself. The use of the sensor as part of a feedback control shows that it can be very effective in reducing smoke puffs. Copyright © 1987 Society of Automotive Engineers, Inc.

Cell proliferation tracking using graphene sensor arrays

The development of a novel label-free graphene sensor array is presented. Detection is based on modification of graphene FET devices and specifically monitoring the change in composition of the nutritive components in culturing medium. Micro-dispensing of Escherichia coli in medium shows feasibility of accurate positioning over each sensor while still allowing cell proliferation. Graphene FET device fabrication, sample dosing, and initial electrical characterisation have been completed and show a promising approach to reducing the sample size and lead time for diagnostic and drug development protocols through a label-free and reusable sensor array fabricated with standard and scalable microfabrication technologies. Copyright © 2012 Ronan Daly et al.

Electrical properties of LiNbO3 (electrolyte)/Cu (anode) bi-layers

In this work specific film structures of Li-Nb-O/Li/Li-Nb-O are investigated by AC Impedance Spectroscopy measurements at different temperatures. This gives the opportunity to investigate properties of the material itself and, at the same time, to consider the influence of the grain boundaries on the ionic behavior of the polycrystalline Lithium Niobate. On the other hand, LiNbO3/Li/Cu multi-layers are studied as electrolyte/anode bi-layers and potential parts of "Li-free" microbatteries. The Li deficiency in the as deposited Li-Nb-O films is cured by forming a "sandwich" of Li-Nb-O/Li/Li-Nb-O, which after annealing becomes ionic conductor. The electrical behavior of an annealed film depends on two sources. The first is due to properties of the material itself and the second is based on the network of the grain boundaries. The average size of the grains is strongly influenced by the structure of the ohmic-contact/substrate. The electrical behavior of the electrolyte/anode interface of the "Li-free" structure LiNbO3/Li/Cu/Au is very similar to the impedance measurements of the single LiNbO3 single films. The whole multilayer structure, though, presents a third relaxation time which is consistent of a small resistance. This resistance is independent of temperature and it seems that is due to the metallic interface Li/Cu/Au. © 2010 Elsevier B.V. All rights reserved.