An approach to functional synthesis of solutions in mechanical conceptual design. Part III: Spatial configuration

These three papers describe an approach to the synthesis of solutions to a class of mechanical design problems; these involve transmission and transformation of mechanical forces and motion, and can be described by a set of inputs and outputs. The approach involves (1) identifying a set of primary functional elements and rules of combining them, and (2) developing appropriate representations and reasoning procedures for synthesising solution concepts using these elements and their combination rules; these synthesis procedures can produce an exhaustive set of solution concepts, in terms of their topological as well as spatial configurations, to a given design problem. This paper (Part III) describes a constraint propagation procedure which, using a knowledge base of spatial information about a set of primary functional elements, can produce possible spatial configurations of solution concepts generated in Part II.

The effect of Ln(III)/An(III) separation on TRU multi-recycling in CONFU assembly

This work examines the basic feasibility of the net-zero-balance TRU multi-recycling concept in which trivalent lanthanide fission products (Ln(III) ) are not separated from trivalent actinides (An(III)). The TRU together with Eu and Gd isotopes are recycled in a standard PWR using Combined Non-Fertile and UO2 (CONFU) assembly design. The assembly assumes a heterogeneous structure where about 20% of U02 fuel pins on the assembly periphery are replaced with Inert Matrix Fuel (IMF) pins hosting TRU, Gd, and Eu generated in the previous cycles. The 2-D neutronic analysis show potential feasibility of Ln / An recycling in PWR using CONFU assembly. Recycling of Ln reduces the fuel cycle length by about 30 effective full power days (EFPD) and TRU destruction efficiency by about 5%. Power peaking factors and reactivity feedback coefficients are close to those of CONFU assembly without Ln recycling.

III-V semiconductor nanowires for optoelectronic device applications

Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exploring physics in reduced dimensions and in complex geometries, as well as in one-dimensional nanowire devices. They are compatible with existing semiconductor technologies and can be tailored into unique axial and radial heterostructures. In this contribution we review the recent efforts of our international collaboration which have resulted in significant advances in the growth of exceptionally high quality IIIV nanowires and nanowire heterostructures, and major developments in understanding the electronic energy landscapes of these nanowires and the dynamics of carriers in these nanowires using photoluminescence, time-resolved photoluminescence and terahertz conductivity spectroscopy. © 2011 Elsevier Ltd. All rights reserved.

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this is essential for future nanowire devices. Reported methods for controlling nanowire phase require dopant addition, or a restricted choice of nanowire diameter, and only rarely yield a pure phase. Here we demonstrate that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio. Phase purity is achieved without sacrificing important specifications of diameter and dopant levels. Pure zinc blende nanowires, free of twin defects, were achieved using a low growth temperature coupled with a high V/III ratio. Conversely, a high growth temperature coupled with a low V/III ratio produced pure wurtzite nanowires free of stacking faults. We present a comprehensive nucleation model to explain the formation of these markedly different crystal phases under these growth conditions. Critical to achieving phase purity are changes in surface energy of the nanowire side facets, which in turn are controlled by the basic growth parameters of temperature and V/III ratio. This ability to tune crystal structure between twin-free zinc blende and stacking-fault-free wurtzite not only will enhance the performance of nanowire devices but also opens new possibilities for engineering nanowire devices, without restrictions on nanowire diameters or doping.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.