30 resultados para Compound interest
Resumo:
Gd-Ba-Cu-O (GdBCO) single grains have been previously melt-processed successfully in air using a generic Mg-Nd-Ba-Cu-O (Mg-NdBCO) seed crystal. Previous research has revealed that the addition of a small amount of BaO 2 to the precursor powders prior to melt processing can suppress the formation of Gd/Ba solid solution, and lead to a significant improvement in superconducting properties of the single grains. Research into the effects of a higher Ba content on single grain growth, however, has been limited by the relatively small grain size in the earlier studies. This has been addressed by developing Ba-rich precursor compounds Gd-163 and Gd-143, fabricated specifically to enable the presence of greater concentrations of Ba during the melt process. In this study, we propose a new processing route for the fabrication of high performance GdBCO single grain bulk superconductors in air by enriching the precursor powder with these new Ba rich compounds. The influence of the addition of the new compounds on the microstructures and superconducting properties of GdBCO single grains is reported. © 2008 IOP Publishing Ltd.
Resumo:
This paper presents the first performance evaluation of interest points on scalar volumetric data. Such data encodes 3D shape, a fundamental property of objects. The use of another such property, texture (i.e. 2D surface colouration), or appearance, for object detection, recognition and registration has been well studied; 3D shape less so. However, the increasing prevalence of depth sensors and the diminishing returns to be had from appearance alone have seen a surge in shape-based methods. In this work we investigate the performance of several detectors of interest points in volumetric data, in terms of repeatability, number and nature of interest points. Such methods form the first step in many shape-based applications. Our detailed comparison, with both quantitative and qualitative measures on synthetic and real 3D data, both point-based and volumetric, aids readers in selecting a method suitable for their application. © 2011 IEEE.
Resumo:
Water supply and wastewater control are critical elements of society's infrastructure. The objective of this study will be to provide a generic risk assessment tool to provide municipalities and the nation as a whole with a quantifiable assessment of their vulnerability to water infrastructure threats. The approach will prioritize countermeasures and identify where research and development is required to further minimize risk. This paper outlines the current context, primary concerns and state-of-the art in critical infrastructure risk management for the water sector and proposes a novel approach to resolve existing questions in the field. The proposed approach is based on a modular framework that derives a quantitative risk index for varied domains of interest. The approach methodology is scaleable and based on formal definitions of event probability and severity. The framework is equally applicable to natural and human-induced hazard types and can be used for analysis of compound risk events.
Resumo:
We present a matching framework to find robust correspondences between image features by considering the spatial information between them. To achieve this, we define spatial constraints on the relative orientation and change in scale between pairs of features. A pairwise similarity score, which measures the similarity of features based on these spatial constraints, is considered. The pairwise similarity scores for all pairs of candidate correspondences are then accumulated in a 2-D similarity space. Robust correspondences can be found by searching for clusters in the similarity space, since actual correspondences are expected to form clusters that satisfy similar spatial constraints in this space. As it is difficult to achieve reliable and consistent estimates of scale and orientation, an additional contribution is that these parameters do not need to be determined at the interest point detection stage, which differs from conventional methods. Polar matching of dual-tree complex wavelet transform features is used, since it fits naturally into the framework with the defined spatial constraints. Our tests show that the proposed framework is capable of producing robust correspondences with higher correspondence ratios and reasonable computational efficiency, compared to other well-known algorithms. © 1992-2012 IEEE.
Resumo:
We propose a new approach for quantifying regions of interest (ROIs) in medical image data. Rotationally invariant shape descriptors (ISDs) were applied to 3D brain regions extracted from MRI scans of 5 Parkinson's patients and 10 control subjects. We concentrated on the thalamus and the caudate nucleus since prior studies have suggested they are affected in Parkinson's disease (PD). In the caudate, both the ISD and volumetric analyses found significant differences between control and PD subjects. The ISD analysis however revealed additional differences between the left and right caudate nuclei in both control and PD subjects. In the thalamus, the volumetric analysis showed significant differences between PD and control subjects, while ISD analysis found significant differences between the left and right thalami in control subjects but not in PD patients, implying disease-induced shape changes. These results suggest that employing ISDs for ROI characterization both complements and extends traditional volumetric analyses. © 2006 IEEE.
Resumo:
This paper presents the first performance evaluation of interest points on scalar volumetric data. Such data encodes 3D shape, a fundamental property of objects. The use of another such property, texture (i.e. 2D surface colouration), or appearance, for object detection, recognition and registration has been well studied; 3D shape less so. However, the increasing prevalence of 3D shape acquisition techniques and the diminishing returns to be had from appearance alone have seen a surge in 3D shape-based methods. In this work, we investigate the performance of several state of the art interest points detectors in volumetric data, in terms of repeatability, number and nature of interest points. Such methods form the first step in many shape-based applications. Our detailed comparison, with both quantitative and qualitative measures on synthetic and real 3D data, both point-based and volumetric, aids readers in selecting a method suitable for their application. © 2012 Springer Science+Business Media, LLC.
Resumo:
The magnetocaloric effect in magnetic materials is of great interest nowadays. In this article we present an investigation about the magnetic properties near the magnetic transition in a polycrystalline sample of a manganite Tb0.9 Sn0.1 MnO3. Particularly, we are interested in describing the nature of the magnetic interactions and the magnetocaloric effect in this compound. The temperature dependence of the magnetization was measured to determine the characteristics of the magnetic transition and the magnetic entropy change was calculated from magnetization curves at different temperatures. The magnetic solid is paramagnetic at high temperatures. We observe a dominant antiferromagnetic interaction below Tn =38 K for low applied magnetic fields; the presence of Sn doping in this compound decreases the Ńel temperature of the pure TbMnO3 system. A drastic increase in the magnetization as a function of temperature near the magnetic transition suggests a strong magnetocaloric effect. We found a large magnetic entropy change Δ SM (T) of about -4 J/kg K at H=3 T. We believe that the magnetic entropy change is associated with the magnetic transition and we interpret it as due to the coupling between the magnetic field and the spin ordering. This relatively large value and broad temperature interval (about 35 K) of the magnetocaloric effect make the present compound a promising candidate for magnetic refrigerators at low temperatures. © 2007 American Institute of Physics.
Resumo:
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. © 2011 World Scientific Publishing Company.
Resumo:
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE NANO Organizers.
Resumo:
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE.
Resumo:
The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.