InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength

We demonstrate the growth of crack-free blue and greenemitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5×1 09 cm-2 to 2×109 cm-2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Plasma enhancement of current from carbon cathodes for field emission displays

This paper examines the possibility of using a background gas medium to enhance the current available from low threshold carbon cathodes. The field emission current is used to initiate a plasma in the gas medium, and thereby achieve a current multiplication effect. Results on the variation of anode current as a function of electric field and gas pressure are presented. These are compared with model calculations to verify the principles of operation. The influence of ion bombardment on the long term performance thin film carbon cathodes is examined for He and Ar multiplication plasmas. A measure of the influence of current multiplication on display quality is presented by examining light output from two standard low voltage phosphors. Also studied are the influence of doping the carbon with N to lower the threshold voltage for emission as well as the consequent impact on anode current from the plasma.

Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.

Gasoline fuelled partially premixed compression ignition in a light duty multi cylinder engine: A study of low load and low speed operation

The objective of this study was to examine the operating characteristics of a light duty multi cylinder compression ignition engine with regular gasoline fuel at low engine speed and load. The effects of fuel stratification by means of multiple injections as well as the sensitivity of auto-ignition and burn rate to intake pressure and temperature are presented. The measurements used in this study included gaseous emissions, filter smoke opacity and in-cylinder indicated information. It was found that stable, low emission operation was possible with raised intake manifold pressure and temperature, and that fuel stratification can lead to an increase in stability and a reduced reliance on increased temperature and pressure. It was also found that the auto-ignition delay sensitivity of gasoline to intake temperature and pressure was low within the operating window considered in this study. Nevertheless, the requirement for an increase of pressure, temperature and stratification in order to achieve auto-ignition time scales small enough for combustion in the engine was clear, using pump gasoline. Copyright © 2009 SAE International.

Investigation into partially premixed combustion in a light-duty multi-cylinder diesel engine fuelled gasoline and diesel with a mixture of

Partially premixed compression ignition (PPCI) engines operating with a low temperature highly homogeneous charge have been demonstrated previously using conventional diesel fuel. The short ignition delay of conventional diesel fuel requires high fuel injection pressures to achieve adequate premixing along with high levels of EGR (exhaust gas recirculation) to achieve low NOx emissions. Low load operating regions are typified by substantial emissions of CO and HC and there exists an upper operating load limitation due to very high rates of in-cylinder gas pressure rise. In this study mixtures of gasoline and diesel fuel were investigated using a multi-cylinder light duty diesel engine. It was found that an increased proportion of gasoline fuel reduced smoke emissions at higher operating loads through an increase in charge premixing resulting from an increase in ignition delay and higher fuel volatility. The results of this investigation confirm that a combination of fuel properties, exhibiting higher volatility and increased ignition delay, would enable a widening of the low emission operating regime, but that consideration must be given to combustion stability at low operating loads. Copyright © 2007 SAE International.

Exhaust gas ignition (EGI)-a new concept for rapid light-off of automotive exhaust catalyst

Increasing pressure on lowering vehicle exhaust emissions to meet stringent California and Federal 1993/1994 TLEV emission standards of 0.125 gpm NMOG, 3.4 gpm CO and 0.4 gpm NOx and future ULEV emission standards of 0.04 gpm NMOG, 1.7 gpm CO and 0.2 gpm NOx has focused specific attention on the cold start characteristics of the vehicle's emission system, especially the catalytic converter. From test data it is evident that the major portion of the total HC and CO emissions occur within the first two minutes of the driving cycle while the catalyst is heating up to operating temperature. The use of an electrically heated catalyst (EHC) has been proposed to alleviate this problem but the cost and weight penalties are high and the durability has yet to be fully demonstrated (1)*. This paper describes a method of reducing the light-off time of the catalytic converter to less than 20 seconds by means of an afterburner. The system uses exhaust gases from the engine calibrated to run rich and additional air injected into the exhaust gas stream to form a combustible mixture. The key feature concerns the method of making this combustible mixture ignitable within 2 seconds from starting the engine when the exhaust gases arriving at the afterburner are cold and essentially non-reacting. © Copyright 1992 Society of Automotive Engineers, Inc.

Enhanced infra-red emission from sub-millimeter microelectromechanical systems micro hotplates via inkjet deposited carbon nanoparticles and fullerenes

In this paper, we demonstrate a micro-inkjet printing technique as a reproducible post-process for the deposition of carbon nanoparticles and fullerene adlayers onto fully CMOS compatible micro-electro-mechanical silicon-on-insulator infrared (IR) light sources to enhance their infrared emission. We show experimentally a significant increase in the infrared emission efficiency of the coated emitters. We numerically validate these findings with models suggesting a dominant performance increase for wavelengths <5.5 μm. Here, the bimodal size distribution in the diameter of the carbon nanoparticles, relative to the fullerenes, is an effective mediator towards topologically enhanced emittance of our miniaturised emitters. A 90% improvement in IR emission power density has been shown which we have rationalised with an increase in the mean thickness of the deposited carbon nanoparticle adlayer. © 2013 AIP Publishing LLC.

Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells

This paper reports on an extensive analysis of the electroluminescence characteristics of InGaN-based LEDs with color-coded structure, i.e., with a triple quantum well structure in which each quantum well has a different indium content. The analysis is based on combined electroluminescence measurements and two-dimensional simulations, carried out at different current and temperature levels. Results indicate that (i) the efficiency of each of the quantum wells strongly depends on device operating conditions (current and temperature); (ii) at low current and temperature levels, only the quantum well closer to the p-side has a significant emission; (iii) emission from the other quantum wells is favored at high current levels. The role of carrier injection, hole mobility, carrier density and non-radiative recombination in determining the relative intensity of the quantum wells is discussed in the text. © 2013 The Japan Society of Applied Physics.

Properties of electrons and holes during femtosecond cooperative emission

Spectral and energetic characteristics of the cooperative recombination of high density electrons and holes in bulk GaAs are experimentally studied at room temperature. It is shown that the properties and parameters of femtosecond superradiant pulses are conditioned by the collective properties of electrons and holes. Electron-hole pairing and the formation of a short-living coherent e-h BCS state distinguish strongly the regime of cooperative emission from all radiative e-h recombination regimes, which have been observed earlier. The dependences of the energy gap (the order parameter), the Fermi energy, and the band gap of the coherent e-h BCS state on the concentration of electron-hole pairs are obtained.

Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron - hole pairs on a time scale much longer than the characteristic polarisation relaxation time T2. A criterion of the superradiance generation is the condition acmT2 > 1, where α is the gain coefficient and cm is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.

Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm 2) when operated at a current density of 20 A/cm2. © 2013 AIP Publishing LLC.