26 resultados para Cap Canaille


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This paper examines the settlement of instrumented 2 × 2 model pile groups in liquefiable soil based on the results of dynamic centrifuge tests. The piles are end-bearing in dense sand, and are instrumented such that base, shaft and total pile load components can be measured. The data suggest that the overall co-seismic group settlement is accrued from incremental settlements of the individual piles as the group rocks under the action of the kinematic and inertial lateral loads. A Newmarkian framework for describing this behaviour is presented in which permanent settlement is incremented whenever the load in any of the piles exceeds the capacity of the soil to support the pile. This bearing capacity of the piles in liquefied soil is estimated based on measured dynamic soil properties during shaking and observations of the changes in load carried by the piles. The contribution of the pile cap in reducing settlement is also discussed. © 2008 ASCE.

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Numerous piles are often subjected to the combination of cyclic axial and cyclic lateral loads in service, such as piled foundations for offshore platforms which may suffer swaying and rocking motions owing to wind and wave actions. In this research, centrifuge tests were conducted to investigate the effect of previous cyclic axial loads on the performance of pile groups subjected to subsequent cyclic lateral loads. Different pile installation methods were also applied to study the different behaviour of bored and jacked pile groups subjected to cyclic loads. During lateral load cycling, it is seen that cyclic axial loads to which pile groups were previously subjected could reduce the pile cap permanent lateral displacement in the first lateral load cycle but do not influence the incremental rate of permanent displacement in the following lateral load cycles. Moreover, it is found that previous cyclic axial loads could improve the pile cap cyclic lateral secant stiffness, especially for the pre-jacked pile group. When rocking motions were induced by cyclic lateral loads, pile groups subjected to cyclic axial loads before have smaller permanent settlement than those without the cyclic axial loading effect. The designers of piles that are intended to resist significant lateral loads without excessive deformations in service may wish to deploy cyclic axial preloading, accordingly.

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A superconducting fault current limiter (SFCL) for 6.6 kV and 400 A installed in a cubicle for a distribution network substation was conceptually designed. The SFCL consists of parallel- and series-connected superconducting YBCO elements and a limiting resistor. Before designing the SFCL, some tests were carried out. The width and length of each element used in the tests are 30 mm and 210 mm, respectively. The element consists of YBCO thin film of about 200 nm in thickness on cerium dioxide (CeO2) as a cap-layer on a sapphire substrate by metal-organic deposition with a protective metal coat. In the tests, characteristics of each element, such as over-current, withstand-voltage, and so on, were obtained. From these characteristics, series and parallel connections of the elements, called units, were considered. The characteristics of the units were obtained by tests. From the test results, a single phase prototype SFCL was manufactured and tested. Thus, an SFCL rated at 6.6 kV and 400 A can be designed. © 2009 IEEE.

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In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrödinger equations self-consistently. By using the 1D Poisson-Schrödinger solver, we highlight the consequences of neglecting the Schrödinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrödinger, its confinement in the channel is found to be modified. © 2012 IEEE.

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Simulations have investigated single laser 100G Ethernet links enabled by CAP-16 using QAM receivers that not only lower significantly system timing jitter sensitivity but also outperform PAM and standard CAP in terms of power margin. © 2013 OSA.

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For the first time, simulations have analysed the feasibility of 100Gb/s CAP and OFDM systems over SMF links using 18.6GHz directly modulated lasers. We have shown that CAP-16/16- QAM-OFDM and CAP-64/64-QAM-OFDM over a single channel can successfully support transmission over 2km SMF, with power dissipation of ∼2 times that of a 4×25Gb/s NRZ system. © 2012 OSA.

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Simulations have investigated single laser 100G Ethernet links enabled by CAP-16 using QAM receivers that not only lower significantly system timing jitter sensitivity but also outperform PAM and standard CAP in terms of power margin. © 2013 OSA.

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Liquefaction-induced lateral spreading has been responsible for widespread damage to pile foundations in many large earthquakes. The specification of inertial and kinematic pile and pile cap demands is a particularly challenging aspect of the analysis of pile foundations in laterally spreading soils. This paper presents and examines the results from a pair of dynamic centrifuge tests focusing on pile and pile cap demands for small pile groups with different pile spacings. Inertial and kinematic pile cap forces and lateral pile group interaction are examined with regard to the overturning mechanism that dominated the pile group response. © 2014 Taylor & Francis Group.

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Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.

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For the first time, simulations have analysed the feasibility of 100Gb/s CAP and OFDM systems over SMF links using 18.6GHz directly modulated lasers. We have shown that CAP-16/16-QAM-OFDM and CAP-64/64-QAM-OFDM over a single channel can successfully support transmission over 2km SMF, with power dissipation of ∼2 times that of a 4×25Gb/s NRZ system. © 2012 Optical Society of America.

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4 bps/Hz 40 Gb/s carrierless amplitude and phase (CAP) modulation is investigated for nextgeneration datacommunication links. The 40 Gb/s link achieves double the length of a conventional NRZ scheme, despite using a low-bandwidth source. © OSA/OFC/NFOEC 2011.