The effects of a second tunnel on the propagation of ground-borne vibration from an underground railway

Accurate predictions of ground-borne vibration levels in the vicinity of an underground railway are greatly sought in modern urban centers. Yet the complexity involved in simulating the underground environment means that it is necessary to make simplifying assumptions about this environment. One such commonly-made assumption is to model the railway as a single tunnel, despite many underground railway lines consisting of twin-bored tunnels. A unique model for two tunnels embedded in a homogeneous, elastic full space is developed. The vibration response of this two-tunnel system is calculated using the superposition of two displacement fields: one resulting from the forces acting on the invert of a single tunnel, and the other resulting from the interaction between the tunnels. By partitioning of the stresses into symmetric and anti-symmetric mode number components using Fourier decomposition, these two displacement fields can by calculated with minimal computational requirements. The significance of the interactions between twin-tunnels is quantified by calculating the insertion gains that result from the existence of a second tunnel. The insertion-gain results are shown to be localized and highly dependent on frequency, tunnel orientation and tunnel thickness. At some locations, the magnitude of these insertion gains is greater than 20dB. This demonstrates that a high degree of inaccuracy exists in any surface vibration-prediction model that includes only one of the two tunnels. © 2012 Springer.

Customizing the technology roadmapping technique for software companies

Software importance keeps growing fast and consistently for many organizations. The growth of software functionality in manufactured products and the emergence of digital media, convergent spaces including digital content, software, and multi-channels to the market, are recent examples of organizational changes where software assumed a central position for the corporate strategy. This paper analyzes the alignment between strategic objectives and software development processes at software companies and proposes a methodology to ensure that development processes are aligned with the corporate capabilities required to exploit future market opportunities. The methodology includes the categorization of different software companies according to their core capabilities and the customization of the technology roadmapping technique for software companies. The research process included the realization of case studies and a survey. (c) 2006 PICMET.

An automatic speaker recognition system for intelligence applications

This paper presents an automatic speaker recognition system for intelligence applications. The system has to provide functionalities for a speaker skimming application in which databases of recorded conversations belonging to an ongoing investigation can be annotated and quickly browsed by an operator. The paper discusses the criticalities introduced by the characteristics of the audio signals under consideration - in particular background noise and channel/coding distortions - as well as the requirements and functionalities of the system under development. It is shown that the performance of state-of-the-art approaches degrades significantly in presence of moderately high background noise. Finally, a novel speaker recognizer based on phonetic features and an ensemble classifier is presented. Results show that the proposed approach improves performance on clean audio, and suggest that it can be employed towards improved real-world robustness. © EURASIP, 2009.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.