Performance of CMOS Devices in Silicon-on-Sapphire Films After Solid-Phase Epitaxial Growth With Rapid Electron-Beam Heating

The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE

Performance of magnesia cements in porous blocks in acid and magnesium environments

The performance of porous blocks containing three different reactive magnesia-based cements - namely magnesia alone, magnesium oxide: Portland cement (PC) in 1:1 ratio, cured in ambient conditions, and magnesia alone, cured at elevated carbon dioxide conditions, in hydrochloric acid and magnesium sulfate solution - was investigated. Different aggressive chemical solution conditions were used, to which the samples were exposed for up to 12 months and then tested for strength and microstructure. The performance was also compared with that of standard PC-based blocks. The results showed the significant resistance to chemical attack offered by magnesia, both alone and with PC blend in the porous blocks when cured under ambient carbon dioxide conditions, and confirmed the much poorer performance of blocks made from PC alone. The blocks of solely magnesia cured in elevated carbon dioxide conditions, at 20% concentration, showed slightly lower resistance to acid attack than PC; however, the resistance to sulfate attack was much higher. © 2012 Thomas Telford Ltd.

Exploring an effective model of new product development in medical devices: A knowledge cluster approach

This study proposes a new product development (NPD) model that aims to improve the effectiveness of innovative NPD in the medical devices. By adopting open innovation theory and applying an in-depth investigation methodology, this paper proposes a knowledge cluster that improves the integration of interdisciplinary human resources and enhances the acquirement of innovative technologies. A knowledge cluster approach helps gather, organise, synthesise, and accumulate knowledge in order to become the impetus for innovation. Although enterprises are no longer the principals of research and development, they should still be capable of integrating professional physicians, external groups, and individuals through the knowledge cluster platform. However, in order to support an effective NPD model, enterprises should provide adequate incentives and trust to external individuals or groups willing to contribute their expertise and knowledge to this knowledge cluster platform. Copyright © 2013 Inderscience Enterprises Ltd.