Measurement and simulation of surface roughness noise using phased microphone arrays

A turbulent boundary-layer flow over a rough wall generates a dipole sound field as the near-field hydrodynamic disturbances in the turbulent boundary-layer scatter into radiated sound at small surface irregularities. In this paper, phased microphone arrays are applied to the measurement and simulation of surface roughness noise. The radiated sound from two rough plates and one smooth plate in an open jet is measured at three streamwise locations, and the beamforming source maps demonstrate the dipole directivity. Higher source strengths can be observed on the rough plates which also enhance the trailing-edge noise. A prediction scheme in previous theoretical work is used to describe the strength of a distribution of incoherent dipoles and to simulate the sound detected by the microphone array. Source maps of measurement and simulation exhibit satisfactory similarities in both source pattern and source strength, which confirms the dipole nature and the predicted magnitude of roughness noise. However, the simulations underestimate the streamwise gradient of the source strengths and overestimate the source strengths at the highest frequency. © 2008 Elsevier Ltd. All rights reserved.

Heat release rate measurement in turbulent flames

The dominant industrial approach for the reduction of NO x emissions in industrial gas turbines is the lean pre-mixed prevaporized concept. The main advantage of this concept is the lean operation of the combustion process; this decreases the heat release rate from the flame and results in a reduction in operating temperature. The direct measurement of heat release rates via simultaneous laser induced fluorescence of OH and CH 2O radicals using planar laser induced fluorescence. The product of the two images correlated with the forward production rate of the HCO radical, which in turn has correlated well with heat release rates from premixed hydrocarbon flames. The experimental methodology of the measurement of heat release rate and applications in different turbulent premixed flames were presented. This is an abstract of a paper presented at the 7th World Congress of Chemical Engineering (Glasgow, Scotland 7/10-14/2005).

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.