Analysis of in-cylinder hydrocarbons in a multi-cylinder gasoline HCCI engine using gas chromatography

Gasoline Homogeneous Charge Compression Ignition (HCCI) combustion has been studied widely in the past decade. However, in HCCI engines using negative valve overlap (NVO), there is still uncertainty as to whether the effect of pilot injection during NVO on the start of combustion is primarily due to heat release of the pilot fuel during NVO or whether it is due to pilot fuel reformation. This paper presents data taken on a 4-cylinder gasoline direct injection, spark ignition/HCCI engine with a dual cam system, capable of recompressing residual gas. Engine in-cylinder samples are extracted at various points during the engine cycle through a high-speed sampling system and directly analysed with a gas chromatograph and flame ionisation detector. Engine parameter sweeps are performed for different pilot injection timings and quantities at a medium load point. Results show that for lean engine running conditions, earlier pilot injection timing leads to partial oxidation of the injected pilot fuel during NVO, while the fraction of light hydrocarbons remains constant for all parameter variations investigated. The same applies for a variation in pilot fuel amount. Thus there is evidence that in lean conditions, pilot injection-related NVO effects are dominated by heat release rather than fuel reformation. © 2009 SAE International.

Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.