Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.

Materials and devices toward three-dimensional integration

It has been shown that the apparent benefits of a two-layer stacked SOI system, i.e. packing density and speed improvements, are less than could be expected in the context of a VLSI requirement [1]. In this project the stacked SOI system has been identified as having major application in the realization of integrated, mixed technology systems. Zone-melting-recrystallization (ZMR) with lasers and electron beams have been used to produce device quality SOI material and a small test-bed circuit has been designed as a demonstration of the feasibility of this approach. © 1988.

Method for determining erosion resistance of fibre-insulating materials

A method was developed for the estimation of the erosive wear of fiber-insulating materials. The wear increases with increasing impact velocity of the particles, increasing impact angle, particle size and the thermal ageing of the fibre elements. Through CFD simulation of the particle-containing gas flow, the erosion depth can be predicted.

Load-displacement behavior during sharp indentation of viscous-elastic-plastic materials

A constitutive equation is developed for geometrically-similar sharp indentation of a material capable of elastic, viscous, and plastic deformation. The equation is based on a series of elements consisting of a quadratic (reversible) spring, a quadratic (time-dependent, reversible) dashpot, and a quadratic (time-independent, irreversible) slider-essentially modifying a model for an elastic-perfectly plastic material by incorporating a creeping component. Load-displacement solutions to the constitutive equation are obtained for load-controlled indentation during constant loading-rate testing. A characteristic of the responses is the appearance of a forward-displacing "nose" during unloading of load-controlled systems (e.g., magnetic-coil-driven "nanoindentation" systems). Even in the absence of this nose, and the associated initial negative unloading tangent, load-displacement traces (and hence inferred modulus and hardness values) are significantly perturbed on the addition of the viscous component. The viscous-elastic-plastic (VEP) model shows promise for obtaining material properties (elastic modulus, hardness, time-dependence) of time-dependent materials during indentation experiments.

Design and process selection for joints in flexible materials

The application of high performance textiles has grown significantly in the last 10 to 15 years. Various research groups throughout the United Kingdom, such as the Department of Trade and Industry, have identified technical textiles as a field for future development. There is little design guidance for joining of flexible materials or general property models that can be applied to theses materials. This lack is due to the large diversity of properties, structures and resulting behaviours of the materials that are classified as "Flexible Materials". This dissertation explores the issues that are involved in characterising the materials at the fibre, bulk and textile levels. Different units of measurement are used for each stage of the manufacturing process of flexible materials and this disparity creates problems when trying to make general comparisons (e.g. comparing textiles to polymer films). Thus, a possible solution to this is to create selection charts that allow designers to compare the strength of materials for a given mass per unit area. A design tool was created using the Cambridge Engineering Selector (CES) software to enable the selection of joining processes for material. The tool is effective in selecting a reduced number of viable joining processes. Through case studies it was shown that designers are required to examine the selected processes (identified by the software) in greater detail - in particular the economics and geometry of the joint - in order to identify the optimum joining process.

Nested sampling for materials: the case of hard spheres

The recently introduced nested sampling algorithm allows the direct and efficient calculation of the partition function of atomistic systems. We demonstrate its applicability to condensed phase systems with periodic boundary conditions by studying the three dimensional hard sphere model. Having obtained the partition function, we show how easy it is to calculate the compressibility and the free energy as functions of the packing fraction and local order, verifying that the transition to crystallinity has a very small barrier, and that the entropic contribution of jammed states to the free energy is negligible for packing fractions above the phase transition. We quantify the previously proposed schematic phase diagram and estimate the extent of the region of jammed states. We find that within our samples, the maximally random jammed configuration is surprisingly disordered.

New approaches for enhancing light emission from Er-based materials and devices

In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron-hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 μm in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 μm owing to the efficient reduction of the defect density. © 2008 Elsevier B.V. All rights reserved.

Erbium doped materials for a Si-based microphotonics

We have investigated the role of the Si excess on the photoluminescence properties of Er doped substoichiometric SiOx layers. We demonstrate that the Si excess has two competing roles: when agglomerated to form Si nanoclusters (Si-nc) it enhances the Er excitation efficiency but it also introduces new non-radiative decay channels. When Er is excited through an energy transfer from Si-nc, the beneficial effect on the enhanced excitation efficiency prevails and the Er emission increases with increasing Si content. Nevertheless the maximum excited Er fraction is only of the order of percent. In order to increase the concentration of excited Er ions, a different approach based on Er silicate thin film has been explored. Under proper annealing conditions, an efficient luminescence at 1535 nm is found and all of the Er ions in the material is optically active. The possibility to efficiently excite Er ions also through electron-hole mediated processes is demonstrated in nanometer-scale Er-Si-O/Si multilayers. These data are presented and discussed.