158-microJ pulses from a single-transverse-mode, large-mode-area erbium-doped fiber amplifier.

We report the amplification of 10-100-pJ semiconductor diode pulses to an energy of 158 microJ and peak powers >100 kW in a multistage fiber amplifier chain based on a single-mode, large-mode-area erbium-doped amplifier design. To our knowledge these results represent the highest single-mode pulse energy extracted from any doped-fiber system.

158-μJ pulses from a single-transverse-mode, large-mode-area erbium-doped fiber amplifier

We report the amplification of 10-100-pJ semiconductor diode pulses to an energy of 158 μJ and peak powers >100 kW in a multistage fiber amplifier chain based on a single-mode, large-mode-area erbium-doped amplifier design. To our knowledge these results represent the highest single-mode pulse energy extracted from any doped-fiber system. © 1997 Optical Society of America.

Report on the 1993 IFAC World Congress standards and guidelines session

This brief note reviews five papers which were presented at the 1993 IFAC World Congress, on the theme 'standards and guidelines for computer-aided control engineering (CACE)'. This session was organized as part of the CACE Software Standardization Initiative, a combined effort of the IFAC and IEEE Control System Society committees on standards. The motivation of this report is to note the substantial progress that was made in this initiative, and to provide the basis for further discussion and work. The papers under review were concerned with integrated design environments, the use of the EXPRESS language for defining standard data structures, database management, user interfaces, and the modeling and simulation of hybrid systems.

Improving data quality in DSM modelling: A structural comparison approach

The Dependency Structure Matrix (DSM) has proved to be a useful tool for system structure elicitation and analysis. However, as with any modelling approach, the insights gained from analysis are limited by the quality and correctness of input information. This paper explores how the quality of data in a DSM can be enhanced by elicitation methods which include comparison of information acquired from different perspectives and levels of abstraction. The approach is based on comparison of dependencies according to their structural importance. It is illustrated through two case studies: creation of a DSM showing the spatial connections between elements in a product, and a DSM capturing information flows in an organisation. We conclude that considering structural criteria can lead to improved data quality in DSM models, although further research is required to fully explore the benefits and limitations of our proposed approach.

Forecasting high-frequency futures returns using online langevin dynamics

Forecasting the returns of assets at high frequency is the key challenge for high-frequency algorithmic trading strategies. In this paper, we propose a jump-diffusion model for asset price movements that models price and its trend and allows a momentum strategy to be developed. Conditional on jump times, we derive closed-form transition densities for this model. We show how this allows us to extract a trend from high-frequency finance data by using a Rao-Blackwellized variable rate particle filter to filter incoming price data. Our results show that even in the presence of transaction costs our algorithm can achieve a Sharpe ratio above 1 when applied across a portfolio of 75 futures contracts at high frequency. © 2011 IEEE.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Active control of the accordion modes of a submerged hull

Active vibration control of a submerged hull is presented. A submarine hull can be idealised as a ring stiffened finite cylinder with applied fluid loading. At low frequencies, rotation of the propeller results in discrete tones at the blade passing frequency and its harmonics. The low frequency axial and radial vibration modes of the submerged body can result in a high level of radiated noise. Global hull modes are difficult to attenuate since passive control techniques such as damping materials are not practical due to size and weight constraints. This work investigates active vibration control of a submarine hull for attenuation of the structural and acoustic responses. Based on a feedforward algorithm at tonal frequencies, active vibration suppression of the axial and radial hull displacements are investigated. The effect of the various control arrangements on the structure-borne radiated noise is examined. Numerical simulations of the control performance are presented.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.