TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Studies of inverter ratings of BDFM adjustable speed drive or generator systems

This paper discusses the inverter ratings of Brushless Doubly-Fed Machine (BDFM) adjustable speed drive (ASD) or generator (ASG) systems. Based on the per phase equivalent circuit model, the ratings of the two inverters in a bidirectional converter are evaluated individually. An approach to minimise the total inverter rating is presented, taking into account power factor constraints of the power grid. The effects of speed deviation and control winding excitation on the inverter ratings are discussed. Predictions of inverter ratings are presented with experimental verification. A design example is also provided in which the total inverter rating is minimised for a practical BDFM based ASG system. © 2005 IEEE.

Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.