35 resultados para 316-C0008C
Resumo:
A foil bearing arrangement has been used to investigate the wear of carbon graphite materials running against 316 stainless steel in the presence of a hydrodynamic film of fluid contaminated with particulate material. As the thickness of the fluid film is reduced so the wear rate of the carbon reaches a maximum value, further reductions in thickness actually producing reduced wear rates. Possible mechanisms and implications of this behaviour are discussed.
Resumo:
This work demonstrates transmission at 2.5 Gbit/s across two wavelength-division multiplexing (WDM) network nodes, constructed using counter-propagating semiconductor optical amplifier (SOA) wavelength converters and an integrated wavelength-selective router separated by 45 km of fiber, with an overall penalty of 0.6 dB. Minimal degradation of the eye diagram is evident across the whole system. Full utilization of the capacity of the router would allow an aggregate 360-Gbit/s node capacity for a WDM channel of 2.5 Gb/s.
Resumo:
A ball-on-flat reciprocating micro-tribometer has been used to measure the friction coefficient between aluminium alloy strip and a steel ball. A relatively small ball and correspondingly low contact load is used to give a contact width of the order of 100μm, closer to asperity contact widths than generally found for this type of test. The effects of load, initial strip surface roughness, lubricants and boundary additives are investigated. It is found that the friction coefficient is significantly reduced by the addition of a lubricant. Observations of the wear tracks and ball surface show that the material transfer from aluminium to the ball is reduced in the presence of the lubricant. The initial friction coefficient is further reduced by the addition of a boundary additive, but the friction coefficient after 8 cycles is unchanged. Copyright © 2004 by Springer Science+Business Media, Inc.
Resumo:
This work is aimed at optimising the static performance of a high voltage SOI LDMOSFET. Starting with a conventional LDMOSFET, 2D and 3D numerical simulation models, able to accurately match datasheet values, have been developed. Moving from the original device, several design techniques have been investigated with the target of improving the breakdown voltage and the ON-state resistance. The considered design techniques are based on the modification of the doping profile of the drift region and the Superjunction design technique. The paper shows that a single step doping within the drift region is the best design choice for the considered device and is found to give a 24% improvement in the breakdown voltage and a 17% reduction of the ON-state resistance. © 2011 IEEE.