Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV

This paper presents a preliminary theoretical and numerical investigation of 4H-SiC JFET and MOSFET at 6.5 kV. To improve the on-state/breakdown performance of the JFET, buried layers in conjunction with a highly doped buffer layer have been used. Trench technology has been employed for the MOSFET. The devices were simulated and optimized using MEDICI[I] simulator. From the comparison between the two devices, it turns out that the JFET offers a better on-state/breakdown trade-off, while the trench MOSFET has the advantage of MOS-control.

A cohesive approach to thin-shell fracture and fragmentation

We develop a finite-element method for the simulation of dynamic fracture and fragmentation of thin-shells. The shell is spatially discretized with subdivision shell elements and the fracture along the element edges is modeled with a cohesive law. In order to follow the propagation and branching of cracks, subdivision shell elements are pre-fractured ab initio and the crack opening is constrained prior to crack nucleation. This approach allows for shell fracture in an in-plane tearing mode, a shearing mode, or a bending of hinge mode. The good performance of the method is demonstrated through the simulation of petalling failure experiments in aluminum plates. © 2005 Elsevier B.V. All rights reserved.