7dB optical power budget improvements of 11.25Gb/s optical OFDM PON systems using optical filters

Wavelength offset super Gaussian optical filters enable 7dB increases in optical power budget of 11.25Gb/s optical OFDM PON systems using directly modulated DFBs, considerably relax filter bandwidth requirement and improve performance robustness to bandwidth variation. © 2011 Optical Society of America.

First experimental demonstration of low-cost VCSEL-intensity modulated end-to-end real-time optical OFDM signal transmission at 11.25Gb/s over 25km SSMFs

Low-cost, narrow modulation bandwidth, un-cooled VCSELs can be utilized to directly modulate 64-QAM-encoded 11.25Gb/s signals for end-to-end real-time optical OFDM transmission over 25km SSMF IMDD systems with excellent performance robustness. © 2011 Optical Society of America.

First real-time experimental demonstrations of 11.25Gb/s optical OFDMA PONs with adaptive dynamic bandwidth allocation.

End-to-end real-time experimental demonstrations are reported, for the first time, of aggregated 11.25Gb/s over 26.4km standard SMF, optical orthogonal frequency division multiple access (OOFDMA) PONs with adaptive dynamic bandwidth allocation (DBA). The demonstrated intensity-modulation and direct-detection (IMDD) OOFDMA PON system consists of two optical network units (ONUs), each of which employs a DFB-based directly modulated laser (DML) or a VCSEL-based DML for modulating upstream signals. Extensive experimental explorations of dynamic OOFDMA PON system properties are undertaken utilizing identified optimum DML operating conditions. It is shown that, for simultaneously achieving acceptable BERs for all upstream signals, the OOFDMA PON system has a >3dB dynamic ONU launch power variation range, and the BER performance of the system is insusceptible to any upstream symbol offsets slightly smaller than the adopted cyclic prefix. In addition, experimental results also indicate that, in addition to maximizing the aggregated system transmission capacity, adaptive DBA can also effectively reduce imperfections in transmission channel properties without affecting signal bit rates offered to individual ONUs.

2 μm solid-state laser mode-locked by single-layer graphene

We report a 2 μm ultrafast solid-state Tm: Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited ∼ 410 fs pulses, with a spectral width ∼ 11.1 nm at 2067 nm. The maximum average output power is 270 mW, at a pulse repetition frequency of 110 MHz. This is a convenient high-power transform-limited ultrafast laser at 2 μm for various applications, such as laser surgery and material processing. © 2013 American Institute of Physics.

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.