Optical learning in a smart spatial light modulator

A synaptic plane rendered by an array of smart pixels was described regarding its application as a complementary component for neural network implementation. The smart spatial light modulator featured auto-modification abilities. Thus, an optical system incorporating this device can show self-reliant optical learning. Furthermore, the optical system design, in the area of its optical interconnection scheme, is highly flexible since the independent weight-plane pixels eliminated the difficulty between weight update calculation and weight representation.

High-speed wavelength conversion utilizing birefringence in semiconductor optical amplifiers

This paper describes a novel technique whereby a mixture of cross-phase and cross-gain modulation effects in an SOA causes polarization rotation of a cw probe beam in the presence of a signal pulse, enabling the transmission of the probe through a polarizer to be controlled. The benefits of this approach are: 1) Very high extinction ratios present in the wavelength converted signal (>30 achieved); 2) A non-inverted wavelength converted signal, which is advantageous for chirp-compensation;2 3) A simple and stable experimental set-up, 4) Converted pulses which can be shaped to be faster than the input pulses.

Chirp limitation on high-speed wavelength conversion using semiconductor optical amplifiers

The cross-gain-saturation effect in SOAs, has been shown to enable robust high-speed wavelength conversion. Under strong electrical and optical pumping, conversion speeds in excess of 20 Gbit/s have been illustrated. However, the effect of chirp on transmission distance at such ultrahigh bit rates has not been studied theoretically in detail. This paper considers the chirp introduced on conversion, employing cross-gain saturation, and studies its dependence on amplifier drive current and signal power. It further shows how an increase in injected cw optical power can reduce chirp while improving conversion speed.

Gain-switched dynamics of tapered waveguide bow-tie lasers

The use of tapered waveguide lasers and amplifiers for enhanced picosecond pulse generation has led to order-of-magnitude peak power and pulse energy improvements. Monolithic pulse generation schemes have so far relied on a double-tapered bow-tie structure. The modeling of tapered lasers has so far been limited to steady-state operation or has lacked experimental comparison. This paper considers both experimentally and theoretically the gain-switched performance of bow-tie lasers of various taper angles. The role of transverse-mode spatial hole burning in tapered waveguide lasers is thereby investigated.

Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

Post-processing of vertical-cavity surface-emitting lasers for transverse mode and polarization control

The operation on how high quality single-mode operation can be readily attained on etching circles in multimode devices is discussed. Arrays of such spots can also be envisaged. Control of the polarization state is also achieved by use of deep line etches. The output filaments and beam shapes of the conventional multimode vertical cavity surface emitting lasers (VCSEL) is shown to be engineered in terms of their positions, widths, and polarizations by use of focused ion beam etching (FIBE). Several GaAs quantum well top-emitting devices with cavity diameters of 10 μm and 18 μm were investigated.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

High bandwidth optical links over multimode fibre

A Fabry-Perot laser source operating at 1300 nm was modulated at 2.5 Gb/s with a 27-1 pseudo-random bit sequence. Three techniques were examined for increasing the bandwidth of optical links using multimode fiber (MMF). With an offset launch of 14 μm, the eye remained open after the 2 km link of 50 μm core MMF containing seven connectors and three splices. An approximate four-fold bandwidth improvement was obtained using the offset launch with a bandwidth-length product of 7.5 Gb/s.km and a bit error rate below 10-10. The bandwidth enhancement was stable against environmental influences on the fiber link, such as mechanical agitation. Detailed simulations demonstrated that the technique allows enhanced operating bandwidths in over 99% of existing link.

Performance of single mode laser components using 2D photonic lattice reflectors

This paper will report studies of the placement of 2D photonic gratings on either side of the ridge in a Fabry Perot laser device in order to cause single mode emission. Using this approach, side mode suppression ratios of up to 30 dB are achieved, the emission remaining single mode even under 10 Gb/s large signal modulation. It is found that the use of the grating not only causes spectrally dependent reflection but in addition can lead to transverse mode fluctuations. The action of the grating has been studied not just in terms of its edge emission where conversion of the transverse modes is achieved, but also through measurement of the vertical emission from the structure where strong filtering action is observed.

Amorphous silicon display backplanes on plastic substrates

Amorphous silicon thin-film transistors and pixel driver circuits for organic light-emitting diode displays have been fabricated on plastic substrates. Pixel circuits demonstrate sufficient current delivery and long-term stable operation. © 2005 IEEE.

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition

We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs core-shell nanowires exhibit strong photoluminescence as the AlGaAs shell passivates the GaAs nanowire surface reducing the surface nonradiative recombination. © 2007 IEEE.