436 resultados para SILICON-GERMANIUM

PRODUCTION OF SILICON-OXIDES FROM THE GLOW-DISCHARGE DECOMPOSITION OF SILANE AND NO-2

Relevância:

20.00% 20.00%

Publicador:

Veja mais

ELECTRON-BEAM ANNEALING OF B-IMPLANTED, P-IMPLANTED, AS-IMPLANTED, SB-IMPLANTED, AND GA-IMPLANTED SILICON BY MULTIPLE-SCAN METHOD

Relevância:

20.00% 20.00%

Publicador:

Veja mais

COMPARATIVE STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SCANNING-ELECTRON AND PULSED-LASER-ANNEALED SILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

SURFACE-STRUCTURE STUDIES OF ELECTRON-BEAM ANNEALED ION-IMPLANTED SILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

A DEFECT-POOL MODEL FOR NEAR-INTERFACE STATES IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

Relevância:

20.00% 20.00%

Publicador:

Veja mais

A STUDY OF GROWTH DEFECTS IN SEEDED AND UNSEEDED SILICON ON INSULATOR LAYERS

Relevância:

20.00% 20.00%

Publicador:

Veja mais

DYNAMIC MORPHOLOGY OF THE NONEQUILIBRIUM SOLID-MELT INTERFACE IN SILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

RAPID ELECTRON-BEAM REACTED TANTALUM TITANIUM BILAYERS ON SILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

SCANNING ION MICROSCOPY AND MICROSECTIONING OF ELECTRON-BEAM RECRYSTALLIZED SILICON ON INSULATOR DEVICES

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Electrostatically Transduced Face-Shear Mode Silicon MEMS Microresonator

Relevância:

20.00% 20.00%

Publicador:

Veja mais

SILICON-ON-INSULATOR CMOS TRANSISTORS IN DUAL ELECTRON-BEAM RECRYSTALLIZED POLYSILICON

Relevância:

20.00% 20.00%

Publicador:

Veja mais

CROSS-SECTIONAL TEM AND SEM STUDIES OF SILICON ON INSULATOR REGROWTH MECHANISMS

Relevância:

20.00% 20.00%

Publicador:

Veja mais

SEED WINDOW DEFECTS IN SILICON ON INSULATOR MATERIAL

Relevância:

20.00% 20.00%

Publicador:

Veja mais

SCANNING ELECTRON-MICROSCOPY STUDY OF SEEDED RECRYSTALLIZATION OF SILICON-ON-INSULATOR LAYERS WITH EITHER POLYCRYSTALLINE OR EPITAXIALLY DEPOSITED SILICON IN THE SEED WINDOWS

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Creation and properties of nitrogen dangling bond defects in silicon nitride thin films

Relevância:

20.00% 20.00%

Publicador:

Veja mais