250 MHz repetition rate monolithically integrated modulated mode-locked semiconductor laser

We present the first monolithically integrated semiconductor pulse source consisting of a mode-locked laser diode, Mach-Zehnder pulse picker, and semiconductor optical amplifier. Pairs of 5.6 ps pulses are generated at a 250 MHz repetition rate. © 2012 OSA.

Comparison of the coherence properties of superradiance and laser emission in semiconductor structures

The coherence properties of a transient electron-hole state developing during superradiance emission in semiconductor laser structures have been studied experimentally using a Michelson interferometer and Young's classic double-slit configuration. The results demonstrate that, in the lasers studied, the first-order correlation function, which quantifies spatial coherence, approaches unity for superradiant emission and is 0.2-0.5 for laser emission. The supercoherence is due to long-range ordering upon the superradiant phase transition. © 2012 Kvantovaya Elektronika and Turpion Ltd.

SOI CMOS integrated zinc oxide nanowire for toluene detection

The paper reports on the in-situ growth of zinc oxide nanowires (ZnONWs) on a complementary metal oxide semiconductor (CMOS) substrate, and their performance as a sensing element for ppm (parts per million) levels of toluene vapour in 3000 ppm humid air. Zinc oxide NWs were grown using a low temperature (only 90°C) hydrothermal method. The ZnONWs were first characterised both electrically and through scanning electron microscopy. Then the response of the on-chip ZnONWs to different concentrations of toluene (400-2600ppm) was observed in air at 300°C. Finally, their gas sensitivity was determined and found to lie between 0.1% and 0.3% per ppm. © 2013 IEEE.

Elastic properties of crystalline-amorphous core-shell silicon nanowires

The pressure behavior of Raman frequencies and line widths of crystalline core-amorphous shell silicon nanowires (SiNWs) with two different core-to-shell ratio thicknesses was studied at pressures up to 8 GPa. The obtained isothermal compressibility (bulk modulus) of SiNWs with a core-to-shell ratio of about 1.8 is ∼20% higher (lower) than reported values for bulk Si. For SiNWs with smaller core-to-shell ratios, a plastic deformation of the shell was observed together with a strain relaxation. A significant increase in the full width at half-maximum of the Raman LTO-peak due to phonon decay was used to determine the critical pressure at which LTO-phonons decay into LO + TA phonons. Our results reveal that this critical pressure in strained core-shell SiNWs (∼4 GPa) is different from the reported value for bulk Si (∼7 GPa), whereas no change is observed for relaxed core-shell SiNWs. © 2013 American Chemical Society.

Characterization and fabrication of zinc oxide nanowire devices

In this paper, we demonstrate an approach for the local synthesis of ZnO nanowires (ZnO NWs) and the potential for such structures to be incorporated into device applications. Three network ZnO NW devices are fabricated on a chip by using a bottom-up synthesis approach. Microheaters (defined by standard semiconductor processing) are used to synthesize the ZnO NWs under a zinc nitrate (Zn(NO3)2·6H2O) and hexamethylenetetramine (HMTA, (CH2)6·N4) solution. By controlling synthesis parameters, varying densities of networked ZnO NWs are locally synthesized on the chip. The fabricated networked ZnO NW devices are then characterized using UV excitation and cyclic voltammetry (CV) experiments to measure their photoresponse and electrochemical properties. The experimental results show that the techniques and material systems presented here have the potential to address interesting device applications using fabrication methods that are fully compatible with standard semiconductor processing. © 2013 IEEE.

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

Modeling bipolar power semiconductor devices gachovska

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.