Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

Magnetotunnelling spectroscopy: an experimental tool for studying chaos in quantum transport

Resonant tunnelling spectroscopy is used to investigate the energy level spectrum of a wide potential well in the presence of a large magnetic field oriented at angles θ between 0° and 90° to the normal to the plane of the well. In the tilted field geometry, the current-voltage characteristics exhibit a large number of quasiperiodic resonant peaks even though the classical motion of electrons in the potential well is chaotic. The voltage range and spacing of the resonances both change dramatically with θ. We give a quantitative explanation for this behaviour by considering the classical period of unstable periodic orbits within the chaotic sea of the potential well.

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

Single-photon detection using a quantum dot field effect transistor

A novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes is proposed. The optimal channel electron densities and quantum dot parameters for detection of single photons are discussed.

Reynolds number influence on turbulent blocking effects of a rigid plane boundary (3rd report, direct numerical simulation on wall blocking effects for anisotropic turbulence)

The Reynolds number influence on turbulent blocking effects by a rigid plane boundary is studied using direct numerical simulation (DNS). A new forcing method proposed in the second report using Townsend's "simple model eddies" for DNS was extended to generate axisymmetric anisotropic turbulence. A force field is obtained in real space by sprinkling many space-filling "simple model eddies" whose centers are randomly but uniformly distributed in space. The axes of rotation are controlled in this study to generate axisymmetric anisotropic turbulence. The method is applied to a shear-free turbulent boundary layer over a rigid plane boundary and the blocking effects for anisotropic turbulence are investigated. The results show that stationary axisymmetric anisotropic turbulence is generated using the present method. Turbulence intensities near the wall showed good agreements with the rapid distortion theory (RDT) for small t (t ≪ TL), where TL. is the eddy turnover time. The splat effect (i. e. turbulence intensities of the components parallel to the surface are amplified) occurs near the boundary and the viscous effect attenuates the splat effect at the quasi steady state at low Reynolds number as for Isotropic turbulence. Prandtl's secondary flow of the second kind does not occur for low Reynolds number flows, which qualitatively agrees with previous observetion in a mixing-box.