Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron - hole pairs on a time scale much longer than the characteristic polarisation relaxation time T2. A criterion of the superradiance generation is the condition acmT2 > 1, where α is the gain coefficient and cm is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 leads to suppression of phase re-laxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron-hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

Superfluorescence in semiconductor lasers

An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron-hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron - hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.

Phase-conjugation broad area twin-contact semiconductor laser

Experimental demonstration of lasing in a broad area twin-contact semiconductor laser which operates as a phase-conjugation (PC) mirror in an external cavity configuration is reported. This allows "self-aligned" and self-pumped spatially nondegenerate four-wave mixing to be achieved without the need for external optical signals. The external cavity laser system is very insensitive to tilt misalignments of the external mirror in the PC regime and exhibits very good mechanical stability. The resonant frequency of the external cavity lies in the GHz range which corresponds to a subnanosecond time response of phase conjugation processes in the semiconductor laser. © 1997 American Institute of Physics.

Mode-locking using right-angle waveguide, based nanotube saturable absorber

We report passive mode-locking of an Er-doped fiber laser using carbon nanotubes deposited on the facet of a right-angle optical waveguide. © 2013 IEEE.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.

High-power ultrafast solid-state laser using graphene based saturable absorber

We demonstrate a graphene based saturable absorber mode-locked Nd:YVO4 solid-state laser, generating ~14nJ pulses with ~1W average output power. This shows the potential for high-power pulse generation. © 2011 Optical Society of America.

High-power ultrafast solid-state laser using graphene based saturable absorber

We demonstrate a graphene based saturable absorber mode-locked Nd:YVO4 solid-state laser, generating ~14nJ pulses with ~1W average output power. This shows the potential for high-power pulse generation. © 2011 Optical Society of America.

Numerical simulation of dicke superradiance in a semiconductor laser device

This paper reports a theoretical model for Dicke Superradiance in semiconductor laser devices. Simulations agree well with previously-observed superradiance properties and are used to optimize driving conditions and device geometry. © OSA/ANIC/IPR/Sensors/SL/SOF/SPPCom/2011.

Noise and stability in giant-chirp oscillators mode-locked with a nanotube-based saturable absorber

We compare experimental results showing stable dissipative-soliton solutions exist in mode-locked lasers with ultra-large normal dispersion (as large as 21.5 ps2), with both the analytic framework provided by Haus' master-equation and full numerical simulations. © 2010 Optical Society of America.

Bismuth-doped fiber integrated ring laser mode-locked with a nanotube-based saturable absorber

We demonstrate passive mode-locking of a bismuth-doped fiber laser using a single-wall nanotube-based saturable absorber. Stable operation in the all-normal dispersion and average soliton regime is obtained, with an all-fiber integrated format. © 2010 Optical Society of America.

Superradiant emission from a tapered quantum-dot semiconductor diode emitter

Superradiant emission pulses from a quantum-dot tapered device are generated on demand at repetition rates of up to 5 MHz. The pulses have durations as short as 320 fs at a wavelength of 1270 nm. © 2010 Optical Society of America.

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity. © 2013 Copyright SPIE.

High-power ultrafast solid-state laser using graphene based saturable absorber

We demonstrate a graphene based saturable absorber mode-locked Nd:YVO4 solid-state laser, generating ~14nJ pulses with ~1W average output power. This shows the potential for high-power pulse generation. © 2011 Optical Society of America.