Transient thermal analysis of power devices based on Fourier-series thermal model

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600V 50A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module. ©2008 IEEE.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Single-gated multiple-mode power semiconductor devices

A new method has been used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. This paper discusses single-gated devices with multiple modes and aspects of their switching behaviour.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009))

In the above entitled paper (ibid., vol. 55, no. 11, pp. 3001-3011), two errors were noticed after the paper went to press. The errors are corrected here.

Red-Green-Blue 2D tuneable liquid crystal laser devices

In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.

VGs for a normal SBLI with a downstream diffuser

New types of vortex generators for boundary layer control were investigated experimentally in a flow field which contains a Mach 1.4 normal Shockwave followed by a subsonic diffuser. A parametric study of device height and distance upstream of the normal shock was undertaken with two novel devices: ramped-vanes and split-ramps. Flowfield diagnostics included high-speed Schlieren, oil flow visualization, and pitot-static pressure measurements. A number of flowfield parameters including flow separation, pressure recovery, centerline incompressible boundary layer shape factor, and shock stability were analyzed and compared to the baseline. All configurations tested yielded an elimination of centerline flow separation with the presence of the vortex generators. However, the devices also tended to increase the three-dimensionality of the flow with increased side-wall interaction. When located 25δo upstream of the normal shock, the largest ramped-vane device (whose height was about 0.75 the incoming uncontrolled boundary layer thickness, δo) yielded the smallest centerline incompressible shape factor and the least streamwise oscillations of the normal shock. However, additional studies are needed to better understand the corner interaction effects, which are substantial. © 2010 by the American Institute of Aeronautics and Astronautics, Inc.

Assessing seasonal precipitation trends in India using parametric and non-parametric statistical techniques

This paper provides an insight into the long-term trends of the four seasonal and annual precipitations in various climatological regions and sub-regions in India. The trends were useful to investigate whether Indian seasonal rainfall is changing in terms of magnitude or location-wise. Trends were assessed over the period of 1954-2003 using parametric ordinary least square fits and non-parametric Mann-Kendall technique. The trend significance was tested at the 95% confidence level. Apart from the trends for individual climatological regions in India and the average for the whole of India, trends were also specifically determined for the possible smaller geographical areas in order to understand how different the trends would be from the bigger spatial scales. The smaller geographical regions consist of the whole southwestern continental state of Kerala. It was shown that there are decreasing trends in the spring and monsoon rainfall and increasing trends in the autumn and winter rainfalls. These changes are not always homogeneous over various regions, even in the very short scales implying a careful regional analysis would be necessary for drawing conclusions regarding agro-ecological or other local projects requiring change in rainfall information. Furthermore, the differences between the trend magnitudes and directions from the two different methods are significantly small and fall well within the significance limit for all the cases investigated in Indian regions (except where noted). © 2010 Springer-Verlag.

Simple and functional photonic devices from printable liquid crystal lasers

In this paper we demonstrate laser emission from emulsion-based polymer dispersed liquid crystals. Such lasers can be easily formed on single substrates with no alignment layers. Remarkably, it is shown that there can exist two radically different laser emission profiles, namely, photonic band-edge lasing and non-resonant random lasing. The emission is controlled by simple changes in the emulsification procedure. Low mixing speeds generate larger droplets that favor photonic band edge lasing with the requisite helical alignment produced by film shrinkage. Higher mixing speeds generate small droplets, which facilitate random lasing by a non-resonant scattering feedback process. Lasing thresholds and linewidth data are presented showing the potential of controllable linewidth lasing sources. Sequential and stacked layers demonstrate the possibility of achieving complex, simultaneous multi-wavelength and "white-light" laser output from a wide variety of substrates including glass, metallic, paper and flexible plastic. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).