Nonlinear pulse switching and compression in a dispersion-imbalanced loop mirror

The results of the high-quality nonlinear pulse compression of gain-switched laser diode pulses using a two-cascade compression scheme are presented. The scheme incorporates a dispersive delay line and a nonlinear pulse compressor based on a dispersion-imbalanced fiber loop mirror (DILM). It is demonstrated that the DILM can be also used for the pulse compression with a compression ratio of 10 or higher.

Mode-controlled vertical cavity surface emitting lasers for bandwidth enhancement of multimode fibre links

A GaAs Vertical Cavity Surface Emitting Laser (VCSEL) that generates controlled modes offset from the center is described. The device is modulated with a 27-1 pseudo-random bit sequence and its output is transmitted along a 1 km length of multimode fiber (MMF). Open eyes are obtained for data rates as high as 1.4Gb/s. The transmission bandwidth increases by a factor of 4 over over-filled launch (OFL). This enhancement is stable against environment influences on the fiber.

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Wavelength conversion, regeneration and tone manipulation using integrated semiconductor lasers and amplifiers

An integrated semiconductor optical amplifier/distributed feedback (SOA/DFB) laser that show promise as a simple all-optical wavelength conversion device together with useful simultaneous functions such as 2R regeneration and the ability to remove a wavelength identifying tone is presented. Wavelength conversion performance at 20Gb/s and 40Gb/s can be obtained with this laser.

High bandwidth optical links over multimode fibre

A Fabry-Perot laser source operating at 1300 nm was modulated at 2.5 Gb/s with a 27-1 pseudo-random bit sequence. Three techniques were examined for increasing the bandwidth of optical links using multimode fiber (MMF). With an offset launch of 14 μm, the eye remained open after the 2 km link of 50 μm core MMF containing seven connectors and three splices. An approximate four-fold bandwidth improvement was obtained using the offset launch with a bandwidth-length product of 7.5 Gb/s.km and a bit error rate below 10-10. The bandwidth enhancement was stable against environmental influences on the fiber link, such as mechanical agitation. Detailed simulations demonstrated that the technique allows enhanced operating bandwidths in over 99% of existing link.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

Feasibility of AlGaInAs lasers for high speed uncooled communication systems

The feasibility of using AlGaInAs lasers for high-speed modulation at high temperatures was evaluated and compared with performance of GaInAsP devices. Both drift-diffusion and rate equation simulation were involved so that the temperature dependence of material parameters was found in terms of overall dynamic performance. Differential gain was estimated by means of drift-diffusion simulations.

Gaussian etched single transverse mode vertical-cavity surface-emitting laser

A continuous Gaussian profile matched to the fundamental mode was etched onto the aperture of a vertical cavity surface emitting laser (VCSEL). Single Gaussian spot emission was achieved over the entire operating current range.

10-Gbits/s all-optical 3R regeneration and format conversion using a gain-switched DFB laser

A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.

10-Gbit/s transmission over 300-m standard multimode fiber using multilevel coding and 2-channel WDM

A combination of multilevel coding schemes and simple two-channel wavelength division multiplexing (WDM) at 1300 and 1550 nm was used to transmit an aggregate of 10 Gbit/s over 300 m of multimode fiber that is typical of that employed in current Local Area Networks (LANs). It was shown that this technique could be a simple solution for achieving 10 Gigabit ethernet links over installed multimode fiber building backbones.

High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.

Performance of 10 Gbit/s VCSELs operating at 85°C

Oxide-confined VCSELs that are able to operate at modulation speeds of 10 Gbit/s at operating temperatures up to 85°C are demonstrated. This level of performance makes these VCSELs attractive sources for commercial applications in the computer interconnect industry.

High speed reconfiguration of dual-purpose vertical cavity surface emitting laser/detector

High-speed configuration results of a conventional 850 nm VCSEL that is modified to operate as an efficient avalanche detector as well as a laser are discussed. The measured laser-to-detector reconfiguration delay of 3.2 ns is longer than the 1.2 ns detector-to-detector reconfiguration delay.

Single-photon detection using a quantum dot field effect transistor

A novel device for detection of single photons based on a GaAs/AlGaAs modulation doped field effect transistor (MODFET) which does not rely on avalanche processes is proposed. The optimal channel electron densities and quantum dot parameters for detection of single photons are discussed.