Carbon nanotube growth for through silicon via application.

Through silicon via (TSV) technology is key for next generation three-dimensional integrated circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the TSV. Three catalyst preparation methods for achieving CNT growth from the bottom of the TSV are investigated. Compared with sputtering and evaporation, catalyst deposition using dip-coating in a FeCl2 solution is found to be a more efficient method for realizing a bottom-up filling of the TSV (aspect ratio 5 or 10) with CNT. The CNT bundles grown in 5 min exceed the 50 μm length of the TSV and are multi-wall CNT with three to eight walls. The CNT bundles inside the TSV were electrically characterized by creating a direct contact using a four-point nanoprober setup. A low resistance of the CNT bundle of 69.7 Ω (297 Ω) was measured when the CNT bundle was contacted midway along (over the full length of) the 25 μm deep TSV. The electrical characterization in combination with the good filling of the TSV demonstrates the potential use of CNT in fully integrated TSV applications.

Tantalum-oxide catalysed chemical vapour deposition of single- and multi-walled carbon nanotubes

Tantalum-oxide thin films are shown to catalyse single- and multi-walled carbon nanotube growth by chemical vapour deposition. A low film thickness, the nature of the support material (best results with SiO2) and an atmospheric process gas pressure are of key importance for successful nanotube nucleation. Strong material interactions, such as silicide formation, inhibit nanotube growth. In situ X-ray photoelectron spectroscopy indicates that no catalyst reduction to Ta-metal or Ta-carbide occurs during our nanotube growth conditions and that the catalytically active phase is the Ta-oxide phase. Such a reduction-free oxide catalyst can be technologically advantageous. © 2013 The Royal Society of Chemistry.

Use of 2G coated conductors for efficient shielding of DC magnetic fields

This paper reports the results of an experimental investigation of the performance of two types of magnetic screens assembled from YBa2Cu3O7-d (YBCO) coated conductors. Since effective screening of the axial DC magnetic field requires the unimpeded flow of an azimuthal persistent current, we demonstrate a configuration of a screening shell made out of standard YBCO coated conductor capable to accomplish that. The screen allows the persistent current to flow in the predominantly azimuthal direction at a temperature of 77 K. The persistent screen, incorporating a single layer of superconducting film, can attenuate an external magnetic field of up to 5 mT by more than an order of magnitude. For comparison purposes, another type of screen which incorporates low critical temperature quasi-persistent joints was also built. The shielding technique we describe here appears to be especially promising for the realization of large scale high-Tc superconducting screens.

DC and AC Shielding properties of bulk high-tc

We have studied numerically and experimentally the magnetic flux penetration in high-Tc superconducting tube subjected to a uniform magnetic field parallel to its long axis. This study is carried in view of designing low-frequency magnetic shields by exploiting the diamagnetic properties of high-Tc superconducting ceramics. We have measured the field attenuation for applied magnetic fields in the frequency range 5 mHz-0.1 Hz by Hall probe measurements and at audio frequencies using a sensing coil. A simple 1D analysis using the Kim critical state model was found to be able to reproduce the experimental data satisfactorily. We have also determined the phase shift between the internal and the applied field both experimentally and numerically. Finally, we have studied the sweep rate dependence of the magnetic shielding properties, using data recorded either at several constant sweep rates dB /dt or at several AC fields of various amplitudes and frequencies. Both methods agree with each other and lead to a n-value of the E ∼ Jn law equal to ∼40 at 77 K. © 2009 IEEE.

YBa 2Cu 3O 7-δ thick films on Ag prepared by the Electrophoretic Deposition technique

YBa 2Cu 3O 7-δ thick films have been deposited onto Ag substrates by the Electrophoretic Deposition (EPD) technique. Different microstructures and electrical behaviours were observed depending on the starting powder. Coatings prepared from commercial powder displayed significant porosity and the superconducting transition width was found to be magnetic-field dependent. Films produced from home-made coprecipitated powder are denser but contain some secondary phases. No dependence of the resistive transition as a function of magnetic field (H 20 Oe) was observed in that case. © 2006 IOP Publishing Ltd.

Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering

We report about the magnetoresistive properties of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering on single crystalline LaAlO3 and MgO substrates. Two orientations of the magnetic field with respect to the electrical current have been studied: (i) magnetic field in the plane of the film and parallel to the electrical current, and (ii) magnetic field perpendicular to the plane of the film. The film grown on LaAlO 3 is characterised by an unusual magnetoresistive behaviour when the magnetic field is applied perpendicular to the film plane: the appearance of two bumps in the field dependence of the resistance is shown to be related to the occurrence of anisotropic magnetoresistive effects in manganate films. © 2004 Elsevier B.V. All rights reserved.

YBa2Cu3O7 tapes prepared by sol-gel deposition techniques: Microstructure and structural characterizations

We report on the preparation conditions of YBa2Cu3O7 polycrystalline superconducting tapes by a sol-gel deposition technique. We present some discussion on the compatibility between the nature of the substrate, the use of a buffer layer, and the conditions used to prepare appropriate superconducting YBa2Cu3O7 materials. We report also on the microstructural characterizations performed in order to evaluate the crystallites size, degree of orientation and connectivity. © 2002 Elsevier Science B.V. All rights reserved.

Novel ZnO nanorod films by chemical solution deposition for planar device applications.

Smooth and continuous ZnO films consisting of densely packed ZnO nanorods (NRs), which can be used for electronic device fabrication, were synthesized using a hydro-thermo-chemical solution deposition method. Such devices would have the novelty of high performance, benefiting from the inherited unique properties of the nanomaterials, and can be fabricated on these smooth films using a conventional, low cost planar process. Photoluminescence measurements showed that the NR films have much stronger shallow donor to valence band emissions than those from discrete ZnO NRs, and hence have the potential for the development of ZnO light emission diodes and lasers, etc. The NR films have been used to fabricate large area surface acoustic wave devices by conventional photolithography. These demonstrated two well-defined resonant peaks and their potential for large area device applications. The chemical solution deposition method is simple, reproducible, scalable and economic. These NR films are suitable for large scale production on cost-effective substrates and are promising for various fields such as sensing systems, renewable energy and optoelectronic applications.

Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition

We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs core-shell nanowires exhibit strong photoluminescence as the AlGaAs shell passivates the GaAs nanowire surface reducing the surface nonradiative recombination. © 2007 IEEE.

Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition

We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth. © 2007 IEEE.