Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

High-current adaptive impedance matching in narrowband power-line communication systems

This paper proposes a high current impedance matching method for narrowband power-line communication (NPLC) systems. The impedance of the power-line channel is time and location variant; therefore, coupling circuitry and the channel are not usually matched. This not only results in poor signal integrity at the receiving end, but also leads to a higher transmission power requirement to secure the communication process. To offset this negative effect, a high-current adaptive impedance circuit to enable impedance matching in power-line networks is reported. The approach taken is to match the channel impedance of N-PLC systems is based on the General Impedance Converter (GIC). In order to achieve high current a special coupler in which the inductive impedance can be altered by adjusting a microcontroller controlled digital resistor is demonstrated. It is shown that the coupler works well with heavy load current in power line networks. It works in both low and high transmitting current modes, a current as high as 760 mA has been obtained. Besides, compared with other adaptive impedance couplers, the advantages include higher matching resolution and a simple control interface. Experimental results are presented to demonstrate the operation of the coupler. © 2011 IEEE.

Single sensor boost converter-based maximum power point tracking algorithms

Two new maximum power point tracking algorithms are presented: the input voltage sensor, and duty ratio maximum power point tracking algorithm (ViSD algorithm); and the output voltage sensor, and duty ratio maximum power point tracking algorithm (VoSD algorithm). The ViSD and VoSD algorithms have the features, characteristics and advantages of the incremental conductance algorithm (INC); but, unlike the incremental conductance algorithm which requires two sensors (the voltage sensor and current sensor), the two algorithms are more desirable because they require only one sensor: the voltage sensor. Moreover, the VoSD technique is less complex; hence, it requires less computational processing. Both the ViSD and the VoSD techniques operate by maximising power at the converter output, instead of the input. The ViSD algorithm uses a voltage sensor placed at the input of a boost converter, while the VoSD algorithm uses a voltage sensor placed at the output of a boost converter. © 2011 IEEE.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

High sensitive NO2 gas sensor with low power consumption using selectively grown ZnO nanorods.

The noble gas sensor using multiple ZnO nanorods was fabricated with CMOS compatible process and sol-gel growth method on selective area and gas response characteristics to NO2 gas of the sensor device were investigated. We confirmed the sensors had high sensitive response denoted by the sensitivity of several tens for NO2 gas sensing and also showed pretty low power consumption close to 20 mW even though the recovery of resistance come up to almost the initial value.

Computation of high-stability DC balancing scheme for ferroelectric liquid crystal on silicon holograms using graphics processing units.

Spatial light modulators based around liquid crystal on silicon have found use in a variety of telecommunications applications, including the optimization of multimode fibers, free-space communications, and wavelength selective switching. Ferroelectric liquid crystals are attractive in these areas due to their fast switching times and high phase stability, but the necessity for the liquid crystal to spend equal time in each of its two possible states is an issue of practical concern. Using the highly parallel nature of a graphics processing unit architecture, it is possible to calculate DC balancing schemes of exceptional quality and stability.