331 resultados para patterning nanotubes


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We present a new route towards customizing the surface properties of microfluidic channels, by a forest of in situ grown multiwalled carbon nanotubes (CNT). Local distortions of the electrical field direction are used to control the direction of the carbon nanotube growth. © 2005 Materials Research Society.

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The maintenance of the growth of the multibillion-dollar semiconductor industry requires the development of techniques for the fabrication and characterisation of nanoscale devices. Consequently, there is great interest in photolithography techniques such as extreme UV and x-ray. Both of these techniques are extremely expensive and technologically very demanding. In this paper we describe research on the feasibility of exploiting x-ray propagation within carbon nanotubes (CNT's) for the fabrication and characterisation of nanoscale devices. This work discusses the parameters determining the design space available. To demonstrate experimentally the feasibility of x-ray propagation, arrays of carbon nanotubes have been grown on silicon membranes. The latter are required to provide structural support for the CNT's while minimising energy loss. To form a waveguide metal is deposited between the nanotubes to block x-ray transmission in this region at the same time as cladding the CNT's. The major challenge has been to fill the spaces between the CNT's with material of sufficient thickness to block x-ray transmission while maintaining the structural integrity of the CNT's. Various techniques have been employed to fill the gaps between the nanotubes including electroplating, sputtering and evaporation. This work highlights challenges encountered in optimising the process.

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An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

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Carbon nanotubes (CNTs) have good mechanical properties and unique structural, electronic, thermal, and optical characteristics. In this work, we present the results of our investigations of a resonator device based on embedded vertical CNT arrays. The device's design is based on the mechanical resonance of the tubes. CoventorWare FEA tools have been used to simulate the mechanical resonance frequencies of the vertical nanotubes arrays integrated on a silicon substrate. ©2008 IEEE.

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This paper will report on the production, dimensional control, and characterization of arrays of cold-cathode field emitters based on multiwall carbon nanotubes, suitable for use in large-area field-emission-based displays.

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This work explored the use of industrial drop-on-demand inkjet printing for masking steel surfaces on engineering components, followed by chemical etching, to produce patterned surfaces. A solvent-based ink was printed on to mild steel samples and the influences of substrate topography and substrate temperature were investigated. Contact angle measurements were used to assess wettability. Regular patterns of circular spots (∼60 /on diameter) and more complex mask patterns were printed. Variation of the substrate temperature had negligible effect on the final size of the printed drops or on the resolution achieved. Colored optical interference fringes were observed on the dried ink deposits and correlated with film thickness measurements by whitelight interferometry.

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We characterized the electrical conductance of well-structured multi-walled carbon nanotubes (MWCNTs) which had post-treated by a rapid vacuum arc thermal annealing process and structure defects in these nanotubes are removed. We found that the after rapid vacuum arc annealing, the conductivity of well-structured MWCNTs can be improved by an order of magnitude. We also investigated the conductivity of MWCNTs bundle by the variation of temperatures. These results show that the conductance of annealed defect-free MWCNTs is sensitive to temperature imply the phonon scatting dominated the electron conductions. Compare to the well-structured MWCNTs, the defect scattering dominated the electron conduction in the as-grown control sample which has large amount of structure defects. A detail measurement of electron conduction from an individual well-structured MWCNT shows that the conductivity increases with temperatures which imply such MWCNTs exhibited semiconductor properties. We also produced back-gated field-effect transistors using these MWCNTs. It shows that the well-structured MWCNT can act as p-type semiconductor. © 2010 IEEE.

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High Temperature superconductors are able to carry very high current densities, and thereby sustain very high magnetic fields. There are many projects which use the first property and these have concentrated on power generation, transmission and utilization, however there are relatively few which are currently exploiting the ability to sustain high magnetic fields. There are two main reasons for this: high field wound magnets can and have been made from both BSCCO and YBCO but currently their cost is much higher than the alternative provided by low Tc materials such as Nb3Sn and NbTi. An alternative form of the material is the bulk form which can be magnetized to high fields and using flux pumping this can be done in situ. This paper explores some of the applications of bulk superconductors and describes methods of producing field patterns using the highly uniform magnetic fields required for MRI and accelerator magnets as the frame of reference. The patterns are not limited to uniform fields and it is entirely possible to produce a field varying sinusoidally in space such as would be required for a motor or a generator. The scheme described in this paper describes a dipole magnet such as is found in an accelerator magnet. The tunnel is 30 × 50 × 1000 mm and we achieve a uniformity of better than 200 ppm over the 1000 mm length and better than 1 ppm over the central 500 mm region. The paper presents results for both the overall uniformity and the integrated uniformity which is 302 ppm over the 1000 mm length. © 2010 IEEE.