Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

Stoichiometric Er silicate thin films, monosilicate (Er2SiO 5) and disilicate (Er2Si2O7), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 °C in oxidizing ambient (O 2) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 °C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er2Si2O7 film annealed at 1200 °C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal. © 2008 IOP Publishing Ltd.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

2-Scale topography dry electrode for biopotential measurements.

The design and fabrication of a novel 2-scale topography dry electrode using macro and micro needles is presented. The macro needles enable biopotential measurements on hairy skin, the function of the micro needles is to decrease the electrode impedance even further by penetrating the outer skin layer. Also, a fast and reliable impedance characterization protocol is described. Based on this impedance measurement protocol, a comparison study is made between our dry electrode, 3 other commercial dry electrodes and a standard wet gel electrode. Promising results are already obtained with our electrodes which do not have skin piercing micro needles. For the proposed electrodes, three different conductive coatings (Ag/AgCl/Au) are compared. AgCl is found to be slightly better than Ag as coating material, while our Au coated electrodes have the highest impedance.

Electrorheologic liquid crystals in microsystems: model and measurements

Fluids with a controllable viscosity gained a lot of interest throughout the last years. One of the advantages of these fluids is that they allow to fabricate hydraulic components such as valves with a very simple structure. Although the properties of these fluids are very interesting for microsystems, their applicability is limited at microscale since the particles suspended in these fluids tend to obstruct microchannels. This paper investigates the applicability of electrorheologic Liquid Crystals (LCs) in microsystems. Since LC's do not contain suspended particles, they show intrinsic advantages over classic rheologic active fluids in microapplications. As a matter of fact, LC molecules are usually only a few nanometers long, and therefore, they can probably be used in systems with sub-micrometer channels or other nanoscale applications. This paper presents a novel model describing the electrorheologic behavior of these nanoscale molecules. This model is used to simulate a microvalve controlled by LC's. By comparing measurements and simulations performed on this microvalve it is possible to prove that the model developed in this paper is very accurate. In addition, these simulations and measurements revealed other remarkable properties of LC's, such as high bandwidths and high changes in flow resistance. © 2006 IEEE.

The use of liquid crystals as electrorheological fluids in microsystems: Model and measurements

Fluids with controllable flow properties have gained considerable interest in the past few years. Some of these fluids such as magnetorheologic fluids are now widely applied to active dampers and valves. Although these fluids show promising properties for microsystems, their applicability is limited to the microscale since particles suspended in these fluids tend to obstruct microchannels. This paper investigates the applicability of electrorheologic liquid crystals (LCs) in microsystems. Since LCs do not contain suspended particles, they show intrinsic advantages over classic rheologic fluids in micro-applications. This paper presents a novel physical model that describes the static and the dynamic behaviour of electrorheologic LCs. The developed model is validated by comparing simulations and measurements performed on a rectangular microchannel. This assessment shows that the model presented in this paper is able to simulate both static and dynamic properties accurately. Therefore, this model is useful for the understanding, simulation and optimization of devices using LCs as electrorheological fluid. In addition, measurements performed in this paper reveal remarkable properties of LCs, such as high bandwidths and high changes in flow resistance. © 2006 IOP Publishing Ltd.

Flow field measurements of pulverized coal combustion using optical diagnostic techniques

This paper demonstrates the application of laser Doppler velocimetry (LDV) and particle image velocimetry (PIV) techniques to a particle-laden reacting flow of pulverized coal. A laboratory-scale open-type annular burner is utilized to generate velocity profiles of coal particles and micrometric alumina particles. Pair-wise two-component LDV measurements and high-speed stereo PIV measurements provide three-dimensional velocity components of the flow field. A detailed comparison of velocities for alumina and coal particle seeding revealed differences attributed to the wide size distribution of coal particles. In addition, the non-spherical shape and high flame luminosity associated with coal particle combustion introduces noise to the Mie scatter images. The comparison of mean and RMS velocities measured by LDV and PIV techniques showed that PIV measurements are affected by the wide size distribution of coal particles, whereas LDV measurements become biased toward the velocity of small particles, as signals from large particles are rejected. This small-particle bias is also reflected in the spectral characteristics for both techniques, which are in good agreement within the range of frequencies accessible. PIV measurements showed an expected lack of response of large coal particles to the turbulence fluctuations. The overall good agreement between LDV and PIV measurements demonstrates the applicability of the high-speed PIV technique to a particle-laden, high luminosity coal flame while highlighting some of its limitations. © 2013 Springer-Verlag Berlin Heidelberg.

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

In this paper, we extract density of localized tail states from measurements of low temperature conductance in amorphous oxide transistors. At low temperatures, trap-limited conduction prevails, allowing extraction of the trapped carrier distribution with energy. Using a test device with a-InGaZnO channel layer, the extracted tail state energy and density at the conduction band minima are 20 meV and 2 × 10 19 cm -3 eV -1, respectively, which are consistent with values reported in the literature. Also, the field-effect mobility as a function of temperature from 77 K to 300 K is retrieved for different gate voltages, yielding the activation energy and the percolation threshold. © 2012 American Institute of Physics.

Turbulence length scale measurements in a motored internal combustion engine

A novel technique, using a 'flying' Hot Wire Anemometer is described; it is shown how the turbulent structure in a motored engine, using a high molecular weight gas as the working fluid, may be investigated with relative simplicity and very little engine modification. Initial results are presented for integral and micro length scales, which are within the range expected based on previous work. Copyright © 1987 Society of Automotive Engineers, Inc.

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the GaAs nanowires. We attribute these effects to electron doping by the polymer which reduces the unsaturated surface-state density in GaAs. We find that when the surface of nanowires is terminated by native oxide, the electron injection across the interface is greatly reduced and such surface doping is absent. Our results suggest that surface engineering via π-conjugated polymers can substantially improve the carrier lifetime in nanowire hybrid heterojunctions with applications in photovoltaics and nanoscale photodetectors.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.