Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Using a semiconductor optical amplifier integrated with a pump laser for mid-span spectral inversion and wavelength conversion

A semiconductor optical amplifier monolithically integrated with a distributed feedback pump laser is used for non-degenerate four wave mixing applications. Experimental results are presented which illustrate the use of this compact device for both wavelength conversion and dispersion compensation applications at high data rates.

Thermal characterization of SOI CMOS micro hot-plate gas sensors

This work reports on thermal characterization of SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) MEMS (micro electro mechanical system) gas sensors using a thermoreflectance (TR) thermography system. The sensors were fabricated in a CMOS foundry and the micro hot-plate structures were created by back-etching the CMOS processed wafers in a MEMS foundry using DRIE (deep reactive ion etch) process. The calibration and experimental details of the thermoreflectance based thermal imaging setup, used for these micro hot-plate gas sensor structures, are presented. Experimentally determined temperature of a micro hot-plate sensor, using TR thermography and built-in silicon resistive temperature sensor, is compared with that estimated using numerical simulations. The results confirm that TR based thermal imaging technique can be used to determine surface temperature of CMOS MEMS devices with a high accuracy. © 2010 EDA Publishing/THERMINIC.

Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser

We report a femtosecond-pulse vertical-external-cavity surface-emitting laser with a continuous repetition frequency tuning range of 8 near 1 GHz. A constant average output power of 56 ± 1 mW and near-transform-limited pulse duration of 450 ± 20 fs were observed across the entire tuning range. © 2011 American Institute of Physics.

Novel designs for Penning ion traps

A number of alternative designs are presented for Penning ion traps suitable for quantum information processing (QIP) applications with atomic ions. The first trap design is a simple array of long straight wires, which allows easy optical access. A prototype of this trap has been built to trap Ca+ and a simple electronic detection scheme has been employed to demonstrate the operation of the trap. Another trap design consists of a conducting plate with a hole in it situated above a continuous conducting plane. The final trap design is based on an array of pad electrodes. Although this trap design lacks the open geometry of the other traps described above, the pad design may prove useful in a hybrid scheme in which information processing and qubit storage take place in different types of trap. The behaviour of the pad traps is simulated numerically and techniques for moving ions rapidly between traps are discussed. Future experiments with these various designs are discussed. All of the designs lend themselves to the construction of multiple trap arrays, as required for scalable ion trap QIP.