Immobilization of cell-binding peptides on poly-ε-caprolactone film surface to biomimic the peripheral nervous system.

Cell-material interactions are crucial for cell adhesion and proliferation on biomaterial surfaces. Immobilization of biomolecules leads to the formation of biomimetic substrates, improving cell response. We introduced RGD (Arg-Gly-Asp) sequences on poly-ε-caprolactone (PCL) film surfaces using thiol chemistry to enhance Schwann cell (SC) response. XPS elemental analysis indicated an estimate of 2-3% peptide functionalization on the PCL surface, comparable with carbodiimide chemistry. Contact angle was not remarkably reduced; hence, cell response was only affected by chemical cues on the film surface. Adhesion and proliferation of Schwann cells were enhanced after PCL modification. Particularly, RGD immobilization increased cell attachment up to 40% after 6 h of culture. It was demonstrated that SC morphology changed from round to very elongated shape when surface modification was carried out, with an increase in the length of cellular processes up to 50% after 5 days of culture. Finally RGD immobilization triggered the formation of focal adhesion related to higher cell spreading. In summary, this study provides a method for immobilization of biomolecules on PCL films to be used in peripheral nerve repair, as demonstrated by the enhanced response of Schwann cells.

The investigation of sweeping speed on the magnetization of a 2 inches diameter YBa2Cu3O7-δ thin film with the circular-type magnetic flux pump

A circular-type magnetic flux pump (CTMFP) device was built to study the flux dynamics on a 2-inch-diameter YBCO thin film. This CTMFP is composed of two CTMFP coils, with each CTMFP coil containing concentric three-phase windings and a dc winding. We connected the three-phase windings to the output of a commercial inverter. By changing the output frequency of the inverter, the sweeping speed of the circular-shaped travelling magnetic wave can be changed. The connection of the phase coils follows the forward consequence, so that the circular-shaped travelling magnetic wave travels inward to the center. The output frequency f was changed from f = 0.01 to 1000.0 Hz. The YBCO sample was sandwiched between the two CTMFP coils to experience the circular-shaped travelling magnetic wave. It was found that the increase of the flux density in the center of the film is independent of the sweeping frequency. In high frequency f = 1000.0Hz, even if the waveform had changed a lot, the increment is still the same as in low frequencies. © 2012 IEEE.

On optical reflection at heterojunction interface of thin film solar cells

Heterojunction is an important structure for the development of photovoltaic solar cells. In contrast to homojunction structures, heterojunction solar cells have internal crystalline interfaces, which will reflect part of the incident light, and this has not been considered carefully before though many heterostructure solar cells have been commercialized. This paper discusses the internal reflection for various material systems used for the development of heterostructure-based solar cells. It has been found that the most common heterostructure solar cells have internal reflection less than 2%, while some potential heterojunction solar cells such as ITO/GaAs, ITO/InP, Si/Ge, polymer/semiconductors and oxide semiconductors may have internal reflection as high as 20%. Also it is worse to have a window layer with a lower refractive index than the absorption layer for solar cells. Ignoring this strong internal reflection will lead to severe deterioration and reduction of conversion efficiency; therefore measures have to be taken to minimize or prevent this internal reflection. © 2013 Elsevier B.V.

Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine

Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm2/V∈s was achieved, which is comparable to that of single-crystal CuPc devices (0.1-1 cm2/V∈s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed. © 2009 Springer-Verlag.

1.5 GHz picosecond pulse generation from a monolithic waveguide laser with a graphene-film saturable output coupler

We fabricate a saturable absorber mirror by coating a graphenefilm on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode-pumped linear cavity channel waveguide laser inscribed in Ytterbium-doped Bismuthate Glass. The laser produces 1.06 ps pulses at ∼1039 nm, with a 1.5 GHz repetition rate, 48% slope efficiency and 202 mW average output power. This performance is due to the combination of the graphene saturable absorber and the high quality optical waveguides in the laser glass. © 2013 Optical Society of America.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Analytical field-effect method for extraction of subgap states in thin-film transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation. © 2012 IEEE.