3D FE Analyses of Buried Pipeline with Elbows Subjected to Lateral Loading

This study investigates the interaction between soil and pipeline in sand subjected to lateral ground displacements with emphasis on the peak force exerted to a bended elbow-pipe. A series of three-dimensional (3D) finite-element (FE) analyses were performed in both opening and closing modes of the elbow section for different initial pipe bending angles. To model the mechanical behavior of sands, two soil models were adopted: Mohr-Coulomb and Nor-Sand soil model. Investigations also included the effects of pipe embedment depth and soil density. Results show that the opening mode exhibits higher ultimate forces and greater localized deformations than the closing mode. Nondimensional charts that account for pipeline location, bending angle, and soil density are developed. Soil-spring pipeline analyses of an elbow-pipe were performed using modified F-δ soil-spring models based on the 3D FE results and were compared to the findings of conventional spring model analyses using the standard two-dimensional soil-spring model. Results show that the pipe strain does not change in the closing mode case. However, in the opening mode case, the pipe strain computed by the modified analysis is larger than that by the conventional analysis and the difference is more pronounced when the pipe stiffness is stiffer. © 2011 American Society of Civil Engineers.

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

Cortical thickness mapping to identify focal osteoporosis in patients with hip fracture.

BACKGROUND: Individuals with osteoporosis are predisposed to hip fracture during trips, stumbles or falls, but half of all hip fractures occur in those without generalised osteoporosis. By analysing ordinary clinical CT scans using a novel cortical thickness mapping technique, we discovered patches of markedly thinner bone at fracture-prone regions in the femurs of women with acute hip fracture compared with controls. METHODS: We analysed CT scans from 75 female volunteers with acute fracture and 75 age- and sex-matched controls. We classified the fracture location as femoral neck or trochanteric before creating bone thickness maps of the outer 'cortical' shell of the intact contra-lateral hip. After registration of each bone to an average femur shape and statistical parametric mapping, we were able to visualise and quantify statistically significant foci of thinner cortical bone associated with each fracture type, assuming good symmetry of bone structure between the intact and fractured hip. The technique allowed us to pinpoint systematic differences and display the results on a 3D average femur shape model. FINDINGS: The cortex was generally thinner in femoral neck fracture cases than controls. More striking were several discrete patches of statistically significant thinner bone of up to 30%, which coincided with common sites of fracture initiation (femoral neck or trochanteric). INTERPRETATION: Femoral neck fracture patients had a thumbnail-sized patch of focal osteoporosis at the upper head-neck junction. This region coincided with a weak part of the femur, prone to both spontaneous 'tensile' fractures of the femoral neck, and as a site of crack initiation when falling sideways. Current hip fracture prevention strategies are based on case finding: they involve clinical risk factor estimation to determine the need for single-plane bone density measurement within a standard region of interest (ROI) of the femoral neck. The precise sites of focal osteoporosis that we have identified are overlooked by current 2D bone densitometry methods.

UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10 12 cm -2), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO 2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles. © 2012 Elsevier B.V. All rights reserved.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness. © 2012 Macmillan Publishers Limited. All rights reserved.

Cryogenic single-shot spectroscopy of a floating poly-silicon gate transistor

Trapped electrons, located close to the channel of a transistor, are promising as data storage elements in non-classical information processing. Cryogenic microwave spectroscopy has shown that these electrons give rise to high quality factor resonances in the drain current and a post excitation dynamic behaviour that is related to the system lifetime. Using a floating poly-silicon gate transistor, single shot spectroscopy is performed to characterise the dynamic behaviour during excitation. This behaviour is seen to be dominated by the decay of the transient component, which gives rise to oscillations around the high quality factor resonance. © 2012 American Institute of Physics.