Ultrafast lasers mode-locked by nanotubes and graphene

Ultrafast lasers play an increasingly important role in many applications. Nanotubes and graphene have emerged as promising novel saturable absorbers for passive mode-locking. Here, we review recent progress on the exploitation of these two carbon nanomaterials in ultrafast photonics. © 2012 Elsevier B.V. All rights reserved.

Metamaterial filter for the near-visible spectrum

We demonstrate metamaterials operating in the near-visible regime based on two-dimensional arrays of gold-coated silicon nanopillars. The nanopillar arrays demonstrate a cutoff response at the metamaterial plasma frequency in accordance with theory and can be utilized for filtering applications. A plasma frequency in the near visible region of λ = 1 μm is calculated numerically for an array with a lattice constant of 300 nm and wire radius of 50 nm, with reflection measurements in agreement with numerical calculations. Such structures can be utilized for achieving negative-index based metamaterials for the visible spectrum. © 2012 American Institute of Physics.

Printed red-green-blue liquid crystal lasers

We present printable laser devices formed by dispersing dye-doped chiral nematic liquid crystals in solution-processible polymers. Unlike current technology, this allows lasers to be formed on a wide variety of surfaces, e.g. paper, plastic, metal. © 2012 OSA.

Double-wall carbon nanotube Q-switched and mode-locked two-micron fiber lasers

We fabricate double-wall carbon nanotube polymer composite saturable absorbers and demonstrate stable Q-switched and Mode-locked Thulium fiber lasers in a linear cavity and a ring cavity respectively. © 2012 OSA.

Graphene passively Q-switched two-micron fiber lasers

We demonstrate a passively Q-switched thulium fiber laser, using a graphene-based saturable absorber. The laser is based on an all-fiber ring cavity and produces ∼2.3 μs pulses at 1884nm, with a maximum pulse energy of 70 nJ. © 2012 OSA.

Metamaterial filter for the near-visible spectrum

We demonstrate metamaterials operating in the near-visible regime based on two-dimensional arrays of gold-coated silicon nanopillars. The nanopillar arrays demonstrate a cutoff response at the metamaterial plasma frequency in accordance with theory and can be utilized for filtering applications. A plasma frequency in the near visible region of λ = 1 μm is calculated numerically for an array with a lattice constant of 300 nm and wire radius of 50 nm, with reflection measurements in agreement with numerical calculations. Such structures can be utilized for achieving negative-index based metamaterials for the visible spectrum.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

Challenges in visible wavelength detection using optically transparent oxide semiconductors

We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications. © 2012 IEEE.

Ultrafast Diode Lasers

List of major symbols.