The inverse problem in magnetic force microscopy--inferring sample magnetization from MFM images.

Nanomagnetic structures have the potential to surpass silicon's scaling limitations both as elements in hybrid CMOS logic and as novel computational elements. Magnetic force microscopy (MFM) offers a convenient characterization technique for use in the design of such nanomagnetic structures. MFM measures the magnetic field and not the sample's magnetization. As such the question of the uniqueness of the relationship between an external magnetic field and a magnetization distribution is a relevant one. To study this problem we present a simple algorithm which searches for magnetization distributions consistent with an external magnetic field and solutions to the micromagnetic equations' qualitative features. The algorithm is not computationally intensive and is found to be effective for our test cases. On the basis of our results we propose a systematic approach for interpreting MFM measurements.

Novel nanostructured carbon nanotube electron sources

In this chapter, we present a review of our continuing efforts toward the development of discrete, low-dimensional nanostructured carbon-based electron emitters. Carbon nanotubes and nanofibers, herein referred to simply as CNTs, are one-dimensional carbon allotropes formed from cylindrically rolled and nested graphene sheets, have diameters between 1 and 500 nm and lengths of up to several millimeters, and are perfect candidates for field emission (FE) applications. By virtue of their extremely strong sp2 C-C bonding, intrinsic to the graphene hexagonal lattice, CNTs have demonstrated impressive chemical inertness, unprecedented thermal stabilities, significant resistance to electromigration, and exceptionally high axial current carrying capacities, even at elevated temperatures. These near ideal cold cathode electron emitters have incredibly high electric field enhancing aspect ratios combined with virtual point sources of the order of a few nanometers in size. The correct integration and judicious development of suitable FE platforms based on these extraordinary molecules is critical and will ultimately enable enhanced technologies. This chapter will review some of the more recent platforms, devices and structures developed by our group, as well as our contributions towards the development of industry-scalable technologies for ultra-high-resolution electron microscopy, portable x-ray sources, and flexible environmental lighting technologies. © 2012 by Pan Stanford Publishing Pte. Ltd. All rights reserved.

Electrostatic force microscopy and potentiometry of realistic nanostructured systems

We investigate the dependency of electrostatic interaction forces on applied potentials in electrostatic force microscopy (EFM) as well as in related local potentiometry techniques such as Kelvin probe microscopy (KPM). The approximated expression of electrostatic interaction between two conductors, usually employed in EFM and KPM, may loose its validity when probe-sample distance is not very small, as often realized when realistic nanostructured systems with complex topography are investigated. In such conditions, electrostatic interaction does not depend solely on the potential difference between probe and sample, but instead it may depend on the bias applied to each conductor. For instance, electrostatic force can change from repulsive to attractive for certain ranges of applied potentials and probe-sample distances, and this fact cannot be accounted for by approximated models. We propose a general capacitance model, even applicable to more than two conductors, considering values of potentials applied to each of the conductors to determine the resulting forces and force gradients, being able to account for the above phenomenon as well as to describe interactions at larger distances. Results from numerical simulations and experiments on metal stripe electrodes and semiconductor nanowires supporting such scenario in typical regimes of EFM investigations are presented, evidencing the importance of a more rigorous modeling for EFM data interpretation. Furthermore, physical meaning of Kelvin potential as used in KPM applications can also be clarified by means of the reported formalism. © 2009 American Institute of Physics.