206 resultados para gated-controlled lateral phototransistor


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Work presented in this paper studies the potential of employing inerters -a novel mechanical device used successfully in racing cars- in active suspension configurations with the aim to enhance railway vehicle system performance. The particular element of research in this paper concerns railway wheelset lateral stability control. Controlled torques are applied to the wheelsets using the concept of absolute stiffness. The effects of a reduced set of arbitrary passive structures using springs, dampers and inerters integrated to the active solution are discussed. A multi-objective optimisation problem is defined for tuning the parameters of the proposed configurations. Finally, time domain simulations are assessed for the railway vehicle while negotiating a curved track. A simplification of the design problem for stability is attained with the integration of inerters to the active solutions. © 2012 IEEE.

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This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.

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This paper evaluates the technique used to improve the latching characteristics of the 200 V n-type superjunction (SJ) lateral insulated-gate bipolar transistor (LIGBT) on a partial silicon-on-insulator. SJ IGBT devices are more prone to latch-up than standard IGBTs due to the presence of a strong pnp transistor with the p layer serving as an effective collector of holes. The initial SJ LIGBT design latches at about 23 V with a gate voltage of 5 V with a forward voltage drop (VON) of 2 V at 300 Acm2. The latch-up current density is 1100 Acm2. The latest SJ LIGBT design shows an increase in latch-up voltage close to 100 V without a significant penalty in VON. The latest design shows a latch-up current density of 1195 A cm2. The enhanced robustness against static latch-up leads to a better forward bias safe operating area. © 1963-2012 IEEE.

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We report a mechanism by which nanoscale filaments self-assemble into asymmetric aggregates by elastocapillary action. Specifically, capillary rise of liquid into an asymmetric pattern of vertically aligned filaments causes the filaments to deflect laterally during elastocapillary densification. We quantitatively show that the lateral deflection can be controlled precisely by the pattern shape and the coupling strength among the filaments. We exploit this mechanism to fabricate asymmetric micropillars and multidirectional bridges of densely packed carbon nanotubes. Analogous behavior occurs as biological filaments interact with liquids, and these findings enable scalable fabrication of anisotropic filament assemblies for manipulating surface interactions between solids and liquids. © 2010 The American Physical Society.

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We present a novel method for controlling the growth orientation of individual carbon nanotube (CNT) microstructures on a silicon wafer substrate. Our method controls the CNT forest orientation by patterning the catalyst layer used in the CNTs growth on slanted KOH edges. The overlap of catalyst area on the horizontal bottom and sloped sidewall surfaces of the KOH-etched substrate enables precise variation of the growth direction. These inclined structures can profit from the outstanding mechanical, electrical, thermal, and optical properties of CNTs and can therefore improve the performance of several MEMS devices. Inclined CNT microstructures could for instance be used as cantilever springs in probe card arrays, as tips in dip-pen lithography, and as sensing element in advanced transducers. ©2009 IEEE.

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This paper addresses the speed and flux regulation of induction motors under the assumption that the motor parameters are poorly known. An adaptive passivity-based control is proposed that guarantees robust regulation as well as accurate estimation of the electrical parameters that govern the motor performance. This paper provides a local stability analysis of the adaptive scheme, which is illustrated by simulations and supported by a successful experimental validation on an industrial product. © 2009 IEEE.

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There is increasing evidence for the involvement of lipid membranes in both the functional and pathological properties of α-synuclein (α-Syn). Despite many investigations to characterize the binding of α-Syn to membranes, there is still a lack of understanding of the binding mode linking the properties of lipid membranes to α-Syn insertion into these dynamic structures. Using a combination of an optical biosensing technique and in situ atomic force microscopy, we show that the binding strength of α-Syn is related to the specificity of the lipid environment (the lipid chemistry and steric properties within a bilayer structure) and to the ability of the membranes to accommodate and remodel upon the interaction of α-Syn with lipid membranes. We show that this interaction results in the insertion of α-Syn into the region of the headgroups, inducing a lateral expansion of lipid molecules that can progress to further bilayer remodeling, such as membrane thinning and expansion of lipids out of the membrane plane. We provide new insights into the affinity of α-Syn for lipid packing defects found in vesicles of high curvature and in planar membranes with cone-shaped lipids and suggest a comprehensive model of the interaction between α-Syn and lipid bilayers. The ability of α-Syn to sense lipid packing defects and to remodel membrane structure supports its proposed role in vesicle trafficking.

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Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most significant effect on the nanowire quality. After capping the minimal tapering and twin-free GaAs NWs with an AlGaAs shell, long exciton lifetimes (over 700ps) are obtained for high TMGa flow rate samples. It is observed that the Ga adatom concentration significantly affects the growth of GaAs NWs, with a high concentration and rapid growth leading to desirable characteristics for optoelectronic nanowire device applications including improved morphology, crystal structure and optical performance. © 2012 IOP Publishing Ltd.

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The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both +/- (0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side +/- (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.

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Offshore wind has enormous worldwide potential to generate increasing amounts of clean, renewable energy. Monopile foundations are considered to be viable in supporting larger offshore wind turbines in shallow to medium depth waters. In this paper, the lateral and axial response of monopiles installed in undrained clays of varying shear strength and stiffness is investigated using three-dimensional finite element analysis. A combination of axial and lateral loads expected at an offshore wind farm located in a water depth of 30 m has been used in the analysis. Numerically derived monopile axial capacities will be compared to those calculated using an established method in the literature. In addition, the lateral monopile capacity will be determined at ultimate limit state and compared to that at the serviceability limit state. Through a parametric study, it will be shown that with the exception of extremely high axial loads that border on monopile axial capacities, variation in axial loads does not have a significant effect on the ultimate lateral capacity and lateral displacement of monopiles. © 2013 Indian Geotechnical Society.