Vortical structures on three-dimensional shock control bumps

The vortical wake structure produced by a three-dimensional shock control bump (SCB) is thought to be useful for controlling transonic buffet on airfoils. However, at present the vorticity produced is relatively weak and the production mechanism is not well understood. Using a combined experimental and computational approach, a preliminary investigation on the wake vorticity for different bump geometries has been carried out. The structure of the wake for on and off-design conditions are considered, and the effects on the downstream boundary layer demonstrated. Three main vortical structures are observed: a primary vortex pair, weak inter-bump vortices and shear flow in the lambda-shock region. The effect of pressure gradients on vortex strength is examined and it is found that spanwise pressure gradients on the front section of the bump are the most significant parameter influencing vortex strength. © 2013 by S.P. Colliss et al.

Experimental studies of an accelerating, pitching, flat plate at low Reynolds number

The understanding of low Reynolds number aerodynamics is becoming increasingly prevalent with the recent surge in interest in advanced Micro-Air Vehicle (MAV) technology. Research in this area has been primarily stimulated by a military need for smaller, more versatile, autonomous, surveillance aircraft. The mechanism for providing the high lift coefficient required forMAV applications is thought to be largely influenced by the formation of a Leading Edge Vortex (LEV). This paper analyses experimentally, the influence of the LEV effect for a flat plate wing (AR = 4) under fast and slow pitch-up motions at Re =10,000 using a combination of dye flow visualisation and PIV measurements. It is found that a fast pitch over 1c shows a flow topology dominant LEV, while for a slow pitch case over 6c, the flow is largely separated. The development of the suction surface flow and the LEV was strongly correlated with the kinematics of the leading edge, suggesting that the effective local angle of incidence at the Leading Edge (LE) is of considerable significance in unsteady pitching motions. © 2013 by P.R.R.J Stevens.

Detailed measurements of spike formation in an axial compressor

This paper presents new experimental measurements of spike-type stall inception. The measurements were carried out in the single stage Deverson compressor at the Whittle Laboratory. The primary objective was to characterize the flow field in the tip clearance gap during stall inception using sufficient instrumentation to give high spatial and temporal resolution. Measurements were recorded using arrays of unsteady pressure transducers over the rotor tips and hot-wires in the tip gap. Pre-stall ensemble averaged velocity and pressure maps were obtained as well as pressure contours of the stall event. In order to study the transient inception process in greater detail, vector maps were built up from hundreds of stalling events using a triggering system based on the stalling event itself. The results show an embryonic disturbance starting within the blade passage and leading to the formation of a clear spike. The origins of the spike and its relation to the tip leakage vortex are discussed. It has also been shown that before stall the flow in the blade passage which is most likely to stall is generally more unsteady, from revolution to revolution, than the other passages in the annulus. Copyright © 2012 by ASME.

Mixing and internal dynamics of droplets impacting and coalescing on a solid surface.

The coalescence and mixing of a sessile and an impacting liquid droplet on a solid surface are studied experimentally and numerically in terms of lateral separation and droplet speed. Two droplet generators are used to produce differently colored droplets. Two high-speed imaging systems are used to investigate the impact and coalescence of the droplets in color from a side view with a simultaneous gray-scale view from below. Millimeter-sized droplets were used with dynamical conditions, based on the Reynolds and Weber numbers, relevant to microfluidics and commercial inkjet printing. Experimental measurements of advancing and receding static contact angles are used to calibrate a contact angle hysteresis model within a lattice Boltzmann framework, which is shown to capture the observed dynamics qualitatively and the final droplet configuration quantitatively. Our results show that no detectable mixing occurs during impact and coalescence of similar-sized droplets, but when the sessile droplet is sufficiently larger than the impacting droplet vortex ring generation can be observed. Finally we show how a gradient of wettability on the substrate can potentially enhance mixing.

On the two classes of global primary modal instability in laminar separation bubbles

The self-excited global instability mechanisms existing in flat-plate laminar separation bubbles are studied here, in order to shed light on the causes of unsteadiness and three- dimensionality of unforced, nominally two-dimensional separated flows. The presence of two known linear global mechanisms, namely an oscillator behavior driven by local regions of absolute inflectional instability and a centrifugal instability giving rise to a steady three- dimensionalization of the bubble, is studied in a series of model separation bubbles. Present results indicate that absolute instability, and consequently a global oscillator behavior, does not exist for two-dimensional bubbles with a peak reversed-flow velocity below 12% of the free-stream velocity. However, the three-dimensional instability becomes active for recirculation levels as low as urev ≈ 7%. These findings suggest a route to the three-dimensionality and unsteadiness observed in experiments and simulations substantially different from that usually found in the literature, in which two-dimensional vortex shedding is followed by three-dimensionalization.

High-order detached eddy simulation, zonal LES and URANS of cavity and labyrinth seal flows

Hybrid numerical large eddy simulation (NLES), detached eddy simulation (DES) and URANS methods are assessed on a cavity and a labyrinth seal geometry. A high sixth-order discretization scheme is used and is validated using the test case of a two-dimensional vortex. The hybrid approach adopts a new blending function. For the URANS simulations, the flow within the cavity remains steady, and the results show significant variation between models. Surprisingly, low levels of resolved turbulence are observed in the cavity for the DES simulation, and the cavity shear layer remains two dimensional. The hybrid RANS-NLES approach does not suffer from this trait.For the labyrinth seal, both the URANS and DES approaches give low levels of resolved turbulence. The zonal Hamilton-Jacobi approach on the other had given significantly more resolved content. Both DES and hybrid RANS-NLES give good agreement with the experimentally measured velocity profiles. Again, there is significant variation between the URANS models, and swirl velocities are overpredicted. © 2013 John Wiley & Sons, Ltd.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

Modelling and design of stress-induced martensite formation in metastable β Ti alloys

The temperature dependence of the stress-induced martensite (SIM) formation in a Ti-10V-2Fe-3Al (Ti-1023) alloy under compressive loading has been studied. At low temperatures, the stress level at which martensite starts to form increases linearly with the deformation temperature, while the stress at which the deformation switches to regular plastic deformation is roughly temperature independent. A thermostatistical model for dislocation evolution is employed to describe deformation twinning in martensite. Combined effects of twinning induced plasticity and solid solution strengthening are considered in terms of temperature variations. The SIM effect disappears on deformation at temperatures beyond ~ 233 ° C, which is close to the predicted Ms temperature of 240°C. The thermostatistical model predicts a transition from twinned martensite to pure slip at 250°C. By providing a model to predict the martensite formation, and by describing deformation twinning, the present work provides a number of tools that may be employed to conceive new titanium alloys combining improved strength and ductility. © 2013 Elsevier B.V.

Grain boundary interface mechanics in strain gradient crystal plasticity

Interactions between dislocations and grain boundaries play an important role in the plastic deformation of polycrystalline metals. Capturing accurately the behaviour of these internal interfaces is particularly important for applications where the relative grain boundary fraction is significant, such as ultra fine-grained metals, thin films and microdevices. Incorporating these micro-scale interactions (which are sensitive to a number of dislocation, interface and crystallographic parameters) within a macro-scale crystal plasticity model poses a challenge. The innovative features in the present paper include (i) the formulation of a thermodynamically consistent grain boundary interface model within a microstructurally motivated strain gradient crystal plasticity framework, (ii) the presence of intra-grain slip system coupling through a microstructurally derived internal stress, (iii) the incorporation of inter-grain slip system coupling via an interface energy accounting for both the magnitude and direction of contributions to the residual defect from all slip systems in the two neighbouring grains, and (iv) the numerical implementation of the grain boundary model to directly investigate the influence of the interface constitutive parameters on plastic deformation. The model problem of a bicrystal deforming in plane strain is analysed. The influence of dissipative and energetic interface hardening, grain misorientation, asymmetry in the grain orientations and the grain size are systematically investigated. In each case, the crystal response is compared with reference calculations with grain boundaries that are either 'microhard' (impenetrable to dislocations) or 'microfree' (an infinite dislocation sink). © 2013 Elsevier Ltd. All rights reserved.

Detailed measurements of spike formation in an axial compressor

This paper presents new experimental measurements of spike-type stall inception. The measurements were carried out in the single stage Deverson compressor at the Whittle Laboratory. The primary objective was to characterize the flow field in the tip clearance gap during stall inception using sufficient instrumentation to give high spatial and temporal resolution. Measurements were recorded using arrays of unsteady pressure transducers over the rotor tips and hot-wires in the tip gap. Prestall ensemble averaged velocity and pressure maps were obtained as well as pressure contours of the stall event. In order to study the transient inception process in greater detail, vector maps were built up from hundreds of stalling events using a triggering system based on the stalling event itself. The results show an embryonic disturbance starting within the blade passage and leading to the formation of a clear spike. The origins of the spike and its relation to the tip leakage vortex are discussed. It has also been shown that before stall, the flow in the blade passage which is most likely to stall is generally more unsteady, from revolution to revolution, than the other passages in the annulus. © 2014 by ASME.

First principles interatomic potential for tungsten based on Gaussian process regression

An accurate description of atomic interactions, such as that provided by first principles quantum mechanics, is fundamental to realistic prediction of the properties that govern plasticity, fracture or crack propagation in metals. However, the computational complexity associated with modern schemes explicitly based on quantum mechanics limits their applications to systems of a few hundreds of atoms at most. This thesis investigates the application of the Gaussian Approximation Potential (GAP) scheme to atomistic modelling of tungsten - a bcc transition metal which exhibits a brittle-to-ductile transition and whose plasticity behaviour is controlled by the properties of $\frac{1}{2} \langle 111 \rangle$ screw dislocations. We apply Gaussian process regression to interpolate the quantum-mechanical (QM) potential energy surface from a set of points in atomic configuration space. Our training data is based on QM information that is computed directly using density functional theory (DFT). To perform the fitting, we represent atomic environments using a set of rotationally, permutationally and reflection invariant parameters which act as the independent variables in our equations of non-parametric, non-linear regression. We develop a protocol for generating GAP models capable of describing lattice defects in metals by building a series of interatomic potentials for tungsten. We then demonstrate that a GAP potential based on a Smooth Overlap of Atomic Positions (SOAP) covariance function provides a description of the $\frac{1}{2} \langle 111 \rangle$ screw dislocation that is in agreement with the DFT model. We use this potential to simulate the mobility of $\frac{1}{2} \langle 111 \rangle$ screw dislocations by computing the Peierls barrier and model dislocation-vacancy interactions to QM accuracy in a system containing more than 100,000 atoms.

Accuracy and transferability of GAP models for tungsten

We introduce interatomic potentials for tungsten in the bcc crystal phase and its defects within the Gaussian Approximation Potential (GAP) framework, fitted to a database of first principles density functional theory (DFT) calculations. We investigate the performance of a sequence of models based on databases of increasing coverage in configuration space and showcase our strategy of choosing representative small unit cells to train models that predict properties only observable using thousands of atoms. The most comprehensive model is then used to calculate properties of the screw dislocation, including its structure, the Peierls barrier and the energetics of the vacancy-dislocation interaction. All software and raw data are available at www.libatoms.org.

Atom probe tomography for advanced metallization

In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe tomography has become an essential analysis to study materials at the nanometer scale. This instrument is the only analytical microscope capable to produce 3D maps of the distribution of the chemical species with an atomic resolution inside a material. This technique has benefit from several instrumental improvements during last years. In particular, the use of laser for the analysis of semiconductors and insulating materials offers new perspectives for characterization. The capability of APT to map out elements at the atomic scale with high sensitivity in devices meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region. In this paper, several examples will show how APT can be used to characterize and understand materials and process for advanced metallization. The possibilities and performances of APT (chemical analysis of all the elements, atomic resolution, planes determination, crystallographic information...) will be described as well as some of its limitations (sample preparation, complex evaporation, detection limit, ...). The examples illustrate different aspect of metallization: dopant profiling and clustering, metallic impurities segregation on dislocation, silicide formation and alloying, high K/metal gate optimization, SiGe quantum dots, as well as analysis of transistors and nanowires. © 2013 Elsevier B.V. All rights reserved.