Performance of CMOS Devices in Silicon-on-Sapphire Films After Solid-Phase Epitaxial Growth With Rapid Electron-Beam Heating

The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE

Mechanisms of erosion of unfilled elastomers by solid particle impact

The mechanisms of material removal were studied during the erosion of two unfilled elastomers (natural rubber and epoxidised natural rubber). The effects of impact velocity and of lubrication by silicone oil were investigated. The development of surface features due to single impacts and during the early stages of erosion was followed by scanning electron microscopy. The basic material removal mechanism at impact angles of both 30° and 90° involves the formation and growth of fine fatigue cracks under the tensile surface stresses caused by impact. No damage was observed after single impacts; it was found that many successive impacts are necessary for material removal. It was found that the erosion rate has a very strong dependance on impact velocity above about 50 ms-1.

Solid particle erosion of boronized steels

Boronizing is a thermochemical diffusion-based process for producing iron boride layers in the surface of steel components. The boride layer is wear resistant and is very hard. Large residual stresses are found to exist in the surface layers, which are a function of substrate steel composition and heat treatment. By slow cooling from the boronizing temperature (900°C), a large compressive stress is developed in the boride layer. Hardening the steel by rapid cooling, either directly from the boronizing treatment or after subsequent austenitizing, develops tension in the coating which causes it to fracture. Tempering of the martensite produces compression in the coating, closing but not welding the cracks. The results of solid particle erosion experiments using silicon carbide, quartz, and glass bead erodents on boronized steels are presented.

Wear of hardfacing white cast irons by solid particle erosion

The response of three commercial weld-hardfacing alloys to erosive wear has been studied. These were high chromium white cast irons, deposited by an open-arc welding process, widely used in the mineral processing and steelmaking industries for wear protection. Erosion tests were carried out with quartz sand, silicon carbide grit and blast furnace sinter of two different sizes, at a velocity of 40 m s-1 and at impact angles in the range 20° to 90°. A monolithic white cast iron and mild steel were also tested for comparison. Little differences were found in the wear rates when silica sand or silicon carbide grit was used as the erodent. Significant differences were found, however, in the rankings of the materials. Susceptibility to fracture of the carbide particles in the white cast irons played an important role in the behaviour of the white cast irons. Sinter particles were unable to cause gross fracture of the carbides and so those materials with a high volume fraction of carbides showed the greatest resistance to erosive wear. Silica and silicon carbide were capable of causing fracture of the primary carbides. Concentration of plastic strain in the matrix then led to a high wear rate for the matrix. At normal impact with silica or silicon carbide erodents mild steel showed a greater resistance to erosive wear than these alloys. © 1995.

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.