270 resultados para SEMICONDUCTOR SATURABLE ABSORBERS
Resumo:
We report the generation of 420 fs pulses of 1.56 μm light from a mode-locked ultrafast laser inscribed Er-doped waveguide laser. Passive mode-locking was achieved using a carbon nanotube saturable absorber. © 2010 Optical Society of America.
Resumo:
A Graphene-based saturable absorber is fabricated using wet chemistry techniques. We use it to passively mode-lock an Erbium doped fiber laser. ~500fs pulses are produced at 1560nm with a 5.2nm spectrum bandwidth. © 2010 Optical Society of America.
Resumo:
A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability. © 2011 IEEE.
Resumo:
The spinning off of Cambridge Semiconductor Ltd (Camsemi) from the High Voltage Microelectronics Lab at Cambridge University is discussed. The technology originated from Cambridge University and was subsequently developed and commercialized as PowerBrane by Camsemi. The paper also discusses the business model and the enabling financial factors that led to the formation of Camsemi as a fables IC company, including access to seed funding from University and the subsequent investments of venture capital in several rounds. © 2011 IEEE.