2.1 GHz MOS mixer linearisation approach for IIP2 enhancement using multiple factor compensation

An integrated downconversion CMOS mixer incorporating a comprehensive compensation scheme is presented which aims to minimise second-order intermodulation distortion (IMD2). Unlike previously reported IMD2 calibration schemes which tune only one nonlinear factor at a time, the presented solution allows simultaneous adjustment of several different factors thus achieving a better compensation. The mixer has been implemented in UMC 0.18 μm CMOS to verify the proposed scheme and for comparison with alternative compensation methods. Measurements show that the solution described can improve the input intercept point (IIP2) by over 20 dB while maintaining good amplification and noise performance. IMD2 calibration results are presented and show useful advantages over other approaches. To the best of the authors' knowledge, this scheme for IMD2 calibration has not been previously reported. © The Institution of Engineering and Technology 2013.

Designing output-feedback predictive controllers by reverse-engineering existing LTI controllers

An approach to designing a constrained output-feedback predictive controller that has the same small-signal properties as a pre-existing output-feedback linear time invariant controller is proposed. Systematic guidelines are proposed to select an appropriate (non-unique) realization of the resulting state observer. A method is proposed to transform a class of offset-free reference tracking controllers into the combination of an observer, steady-state target calculator and predictive controller. The procedure is demonstrated with a numerical example. © 2013 IEEE.

What is the weakest topology in which feedback stability is robust?

Mathematical theorems in control theory are only of interest in so far as their assumptions relate to practical situations. The space of systems with transfer functions in ℋ∞, for example, has many advantages mathematically, but includes large classes of non-physical systems, and one must be careful in drawing inferences from results in that setting. Similarly, the graph topology has long been known to be the weakest, or coarsest, topology in which (1) feedback stability is a robust property (i.e. preserved in small neighbourhoods) and (2) the map from open-to-closed-loop transfer functions is continuous. However, it is not known whether continuity is a necessary part of this statement, or only required for the existing proofs. It is entirely possible that the answer depends on the underlying classes of systems used. The class of systems we concern ourselves with here is the set of systems that can be approximated, in the graph topology, by real rational transfer function matrices. That is, lumped parameter models, or those distributed systems for which it makes sense to use finite element methods. This is precisely the set of systems that have continuous frequency responses in the extended complex plane. For this class, we show that there is indeed a weaker topology; in which feedback stability is robust but for which the maps from open-to-closed-loop transfer functions are not necessarily continuous. © 2013 Copyright Taylor and Francis Group, LLC.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

Unified form language: A domain-specific language for weak formulations of partial differential equations

We present the Unified Form Language (UFL), which is a domain-specific language for representing weak formulations of partial differential equations with a view to numerical approximation. Features of UFL include support for variational forms and functionals, automatic differentiation of forms and expressions, arbitrary function space hierarchies formultifield problems, general differential operators and flexible tensor algebra. With these features, UFL has been used to effortlessly express finite element methods for complex systems of partial differential equations in near-mathematical notation, resulting in compact, intuitive and readable programs. We present in this work the language and its construction. An implementation of UFL is freely available as an open-source software library. The library generates abstract syntax tree representations of variational problems, which are used by other software libraries to generate concrete low-level implementations. Some application examples are presented and libraries that support UFL are highlighted. © 2014 ACM.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.