ON-LINE STEREO PROCESSING FOR THE SEM.

A convenient system for the rapid extraction of three dimensional information from pairs of SEM images has been constructed, eliminating the need for time-consuming photography. Results are produced in a digestable form. Distortions inherent in the SEM record display and in the photographic system are not relevant to the system described; only those arising within the column and stage need be considered.

Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

SPEECH RECOGNITION IN VODIS II.

VODIS II, a research system in which recognition is based on the conventional one-pass connected-word algorithm extended in two ways, is described. Syntactic constraints can now be applied directly via context-free-grammar rules, and the algorithm generates a lattice of candidate word matches rather than a single globally optimal sequence. This lattice is then processed by a chart parser and an intelligent dialogue controller to obtain the most plausible interpretations of the input. A key feature of the VODIS II architecture is that the concept of an abstract word model allows the system to be used with different pattern-matching technologies and hardware. The current system implements the word models on a real-time dynamic-time-warping recognizer.

Modified Kanerva model. Results for real time word recognition

This paper describes results obtained using the modified Kanerva model to perform word recognition in continuous speech after being trained on the multi-speaker Alvey 'Hotel' speech corpus. Theoretical discoveries have recently enabled us to increase the speed of execution of part of the model by two orders of magnitude over that previously reported by Prager & Fallside. The memory required for the operation of the model has been similarly reduced. The recognition accuracy reaches 95% without syntactic constraints when tested on different data from seven trained speakers. Real time simulation of a model with 9,734 active units is now possible in both training and recognition modes using the Alvey PARSIFAL transputer array. The modified Kanerva model is a static network consisting of a fixed nonlinear mapping (location matching) followed by a single layer of conventional adaptive links. A section of preprocessed speech is transformed by the non-linear mapping to a high dimensional representation. From this intermediate representation a simple linear mapping is able to perform complex pattern discrimination to form the output, indicating the nature of the speech features present in the input window.

Continuous speech recognition for the TIMIT database using neural networks

Four types of neural networks which have previously been established for speech recognition and tested on a small, seven-speaker, 100-sentence database are applied to the TIMIT database. The networks are a recurrent network phoneme recognizer, a modified Kanerva model morph recognizer, a compositional representation phoneme-to-word recognizer, and a modified Kanerva model morph-to-word recognizer. The major result is for the recurrent net, giving a phoneme recognition accuracy of 57% from the si and sx sentences. The Kanerva morph recognizer achieves 66.2% accuracy for a small subset of the sa and sx sentences. The results for the word recognizers are incomplete.

Post-processing of vertical-cavity surface-emitting lasers for transverse mode and polarization control

The operation on how high quality single-mode operation can be readily attained on etching circles in multimode devices is discussed. Arrays of such spots can also be envisaged. Control of the polarization state is also achieved by use of deep line etches. The output filaments and beam shapes of the conventional multimode vertical cavity surface emitting lasers (VCSEL) is shown to be engineered in terms of their positions, widths, and polarizations by use of focused ion beam etching (FIBE). Several GaAs quantum well top-emitting devices with cavity diameters of 10 μm and 18 μm were investigated.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

Comment on 'processing and microstructure of single grain uranium-doped Y-Ba-Cu-O superconductor'

We comment on the paper by N Hari Babu et al. (2002 Supercond. Sci. Technol. 15 104-10) and point out misinterpretations of the chemical composition of U-bearing deposits observed in Y123. The observed small deposits are those of new compounds which do not contain Cu, rather than refined Y211 plus U, as stated by the authors. We further note that extensive literature, not quoted, is in disagreement by nearly an order of magnitude concerning the values of Pt and U doping at which the optimum value of Jc is obtained. Other related information, presently in the literature, which may be helpful to those working with this high temperature superconducting chemical system, is presented.

Millisecond processing beyond chip technology: From electronics to photonics

There is a clear and increasing interest in short time annealing processing far below one second, i.e. the lower limit of Rapid Thermal Processing (RTP) called spike annealing. This was driven by the need of suppressing the so-called Transient Enhanced Diffusion in advanced boronimplanted shallow pn-junctions in silicon technology. Meanwhile the interest in flash lamp annealing (FLA) in the millisecond range spread out into other fields related to silicon technology and beyond. This paper reports on recent experiments regarding shallow junction engineering in germanium, annealing of ITO layers on glass and plastic foil to form an conductive layer as well as investigations which we did during the last years in the field of wide band gap semiconductor materials (SiC, ZnO). A more common feature evolving from our work was related to the modeling of wafer stress during millisecond thermal processing with flash lamps. Finally recent achievements in the field of silicon-based light emission basing on Metal-Oxide-Semiconductor Light Emitting Devices will be reported. © 2007 IEEE.

Advanced thermal processing of semiconductor materials in the msec-range

This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing. © 2005 IEEE.