Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

A new, fast response CO2 sensor

The inability of emissions reduction methods to meet upcoming legislation without an unacceptable increase in vehicle cost is a major problem of automobile manufacturer. This work aims to develop a cost-effective reduction of automobile emissions. A prototype CO2 sensor with 5 msec response time was built and bench tested, then used on an engine. The sensor design was based on standard emissions measurement technology using non-dispersive IR absorption. An improved sensor has now been completed with significant improvements in terms of signal to noise ratio and long-term stability. The improved sensor will be used to measure CO2 concentrations on three different engines. The results will then be used to validate engine and catalyst models and to propose control strategies aimed at reducing overall emissions. A brief description of the sensor itself was presented. Original is an abstract.

Starting-up roadmapping fast

Technology roadmapping is a powerful technique for supporting technology management and planning in the firm. The roadmap enables the evolution of markets, products and technologies to be explored, together with the linkages between the various perspectives. A process called T-Plan, which has been developed to support the rapid initiation of roadmapping and thus address these challenges is described.

SOI diode temperature sensor operated at ultra high temperatures-a critical analysis

This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250°C). A low leakage Silicon On Insulator (SOI) diode was designed and fabricated in a 1 μm CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters, IR detectors, or thermal flow sensors. A CMOS compatible micro-heater was integrated with the diode for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We have proven experimentally that the maximum temperature can be as high as 550°C. Long term continuous operation at high temperatures (400°C) showed good stability of the voltage drop. Furthermore, we carried out a detailed theoretical analysis to determine the maximum operating temperature and exlain the presence of nonlinearity factors at ultra high temperatures. © 2008 IEEE.