Yielding of engineering polymers at strain rates of up to 500 s-1

A method is described for measuring the mechanical properties of polymers in compression at strain rates in the range approximately 300-500 s-1. A gravity-driven pendulum is used to load a specimen on the end of an instrumented Hopkinson output bar and the results are processed by a microcomputer. Stress-strain curves up to high strains are presented for polycarbonate, polyethersulphone and high density polyethylene over a range of temperatures. The value of yield stress, for all three polymers, was found to vary linearly with log (strain rate) at strain rates up to 500 s-1. © 1985.

Visualization of turbulent wedges under favourable pressure gradients using both shear-sensitive and temperature-sensitive liquid crystals

Turbulent wedges induced by a 3D surface roughness placed in a laminar boundary layer over a flat plate were visualised for the first time using both shear-sensitive and temperature-sensitive liquid crystals. The experiments were carried out at three different levels of favourable pressure gradients. The purpose of this investigation was to examine the spreading angles of the turbulent wedges indicated by their associated surface shear stresses and heat transfer characteristics and hence obtain further insight about the difference in the behaviour of transitional momentum and thermal boundary layers when a streamwise pressure gradient exists. It was shown that under a zero pressure gradient the spreading angles indicated by the two types of liquid crystals are the same, but the difference increases as the level of favourable pressure gradient increases. The result from the present study could have an important implication to the transition modelling of thermal boundary layers over gas turbine blades.

Distributed optical fiber strain sensing in a secant piled wall

An optical fiber strain sensing technique, based on Brillouin Optical Time Domain Reflectometry (BOTDR), was used to obtain the full deformation profile of a secant pile wall during construction of an adjacent basement in London. Details of the installation of sensors as well as data processing are described. By installing optical fiber down opposite sides of the pile, the distributed strain profiles obtained can be used to give both the axial and lateral movements along the pile. Measurements obtained from the BOTDR were found in good agreement with inclinometer data from the adjacent piles. The relative merits of the two different techniques are discussed. © 2007 ASCE.

Monitoring tunnel deformation induced by close-proximity bored tunneling using distributed optical fiber strain measurements

The paper describes the use of optical fiber Brillouin Optical Time Domain Reflectometry (BOTDR) to monitor the strain distribution in an existing tunnel while a twin tunnel was bored at close-proximity. The twin circular bored tunnels between Serangoon and Bartley stations on the new Circle Line Stage 3 subway in Singapore were constructed at close-proximity to avoid underpinning the foundations of adjacent buildings. The minimum clear separation of the two tunnels is 2.3m (0.4 times the tunnel diameter). The Outer Tunnel was constructed first, followed by the Inner Tunnel, with the earth-pressure balance tunnel boring machines maintained at a minimum of 100m apart. In this trial application of BOTDR, the strain distribution along the Outer Tunnel was measured, in order to monitor its deformation due to the boring of the Inner Tunnel at close-proximity. The aim of the trial application was to determine the practicality of this monitoring method for future use in 'live' tunnels. This paper compares the measurements obtained from optical fiber BOTDR with conventional methods of tunnel monitoring and describes preliminary installation and workmanship guidelines derived from lessons learnt during this trial. © 2007 ASCE.

A packaging technique for silicon MEMS strain sensors on steel

A packaging technique suited to applying MEMS strain sensors realized on a silicon chip to a steel flat surface is described. The method is based on adhesive bonding of the silicon chip rear surface on steel using two types of glue normally used for standard piezoresistive strain sensors (Mbond200/ 600), using direct wire bonding of the chip to a Printed Circuit Board, also fixed on steel. In order to protect the sensor from the external environment, and to improve the MEMS performance, the silicon chip is encapsulated with a metal cap hermetically sealed-off under vacuum condition with a vacuum adhesive in which the bonding wires are also protected from possible damage. In order to evaluate the mechanical coupling of the silicon chip with the bar and thestress transfer extent to the silicon surface, commercial strain sensors have been applied on the chip glued on a steel bar in alaboratory setup able to generate strain by inflection, yielding a stress transfer around 70% from steel to silicon. © 2008 IEEE.

Fabrication and testing of a high resolution extensometer based on resonant MEMS strain sensors

A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork (DETF) sensors bonded on the bar with epoxy glue, one of which is utilized for temperature compensation. Both sensors are driven by a closed loop self-oscillating transresistance amplifier feedback scheme implemented on a PCB (Printed Circuit Board). On the same board, a microcontroller-based frequency measurement circuit is also implemented, which is able to count the square wave fronts of the MEMS oscillator output with a resolution of 20 nsec. The system provides a frequency noise of 0.2 Hz corresponding to an extension resolution of 4 nm for the extensometer. Nearly perfect temperature compensation of the frequency output is achieved in the temperature range 20-35 C using the reference sensor. © 2011 IEEE.