Monitoring tunnel deformation induced by close-proximity bored tunneling using distributed optical fiber strain measurements

The paper describes the use of optical fiber Brillouin Optical Time Domain Reflectometry (BOTDR) to monitor the strain distribution in an existing tunnel while a twin tunnel was bored at close-proximity. The twin circular bored tunnels between Serangoon and Bartley stations on the new Circle Line Stage 3 subway in Singapore were constructed at close-proximity to avoid underpinning the foundations of adjacent buildings. The minimum clear separation of the two tunnels is 2.3m (0.4 times the tunnel diameter). The Outer Tunnel was constructed first, followed by the Inner Tunnel, with the earth-pressure balance tunnel boring machines maintained at a minimum of 100m apart. In this trial application of BOTDR, the strain distribution along the Outer Tunnel was measured, in order to monitor its deformation due to the boring of the Inner Tunnel at close-proximity. The aim of the trial application was to determine the practicality of this monitoring method for future use in 'live' tunnels. This paper compares the measurements obtained from optical fiber BOTDR with conventional methods of tunnel monitoring and describes preliminary installation and workmanship guidelines derived from lessons learnt during this trial. © 2007 ASCE.

A packaging technique for silicon MEMS strain sensors on steel

A packaging technique suited to applying MEMS strain sensors realized on a silicon chip to a steel flat surface is described. The method is based on adhesive bonding of the silicon chip rear surface on steel using two types of glue normally used for standard piezoresistive strain sensors (Mbond200/ 600), using direct wire bonding of the chip to a Printed Circuit Board, also fixed on steel. In order to protect the sensor from the external environment, and to improve the MEMS performance, the silicon chip is encapsulated with a metal cap hermetically sealed-off under vacuum condition with a vacuum adhesive in which the bonding wires are also protected from possible damage. In order to evaluate the mechanical coupling of the silicon chip with the bar and thestress transfer extent to the silicon surface, commercial strain sensors have been applied on the chip glued on a steel bar in alaboratory setup able to generate strain by inflection, yielding a stress transfer around 70% from steel to silicon. © 2008 IEEE.

Fabrication and testing of a high resolution extensometer based on resonant MEMS strain sensors

A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork (DETF) sensors bonded on the bar with epoxy glue, one of which is utilized for temperature compensation. Both sensors are driven by a closed loop self-oscillating transresistance amplifier feedback scheme implemented on a PCB (Printed Circuit Board). On the same board, a microcontroller-based frequency measurement circuit is also implemented, which is able to count the square wave fronts of the MEMS oscillator output with a resolution of 20 nsec. The system provides a frequency noise of 0.2 Hz corresponding to an extension resolution of 4 nm for the extensometer. Nearly perfect temperature compensation of the frequency output is achieved in the temperature range 20-35 C using the reference sensor. © 2011 IEEE.