Multi-frequency operation of a mems vibration energy harvester by accessing five orders of parametric resonance

The mechanical amplification effect of parametric resonance has the potential to outperform direct resonance by over an order of magnitude in terms of power output. However, the excitation must first overcome the damping-dependent initiation threshold amplitude prior to accessing this more profitable region. In addition to activating the principal (1st order) parametric resonance at twice the natural frequency ω0, higher orders of parametric resonance may be accessed when the excitation frequency is in the vicinity of 2ω0/n for integer n. Together with the passive design approaches previously developed to reduce the initiation threshold to access the principal parametric resonance, vacuum packaging (< 10 torr) is employed to further reduce the threshold and unveil the higher orders. A vacuum packaged MEMS electrostatic harvester (0.278 mm3) exhibited 4 and 5 parametric resonance peaks at room pressure and vacuum respectively when scanned up to 10 g. At 5.1 ms-2, a peak power output of 20.8 nW and 166 nW is recorded for direct and principal parametric resonance respectively at atmospheric pressure; while a peak power output of 60.9 nW and 324 nW is observed for the respective resonant peaks in vacuum. Additionally, unlike direct resonance, the operational frequency bandwidth of parametric resonance broadens with lower damping. © Published under licence by IOP Publishing Ltd.

A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

Numerical study of the impact of process variations on the motional resistance of weakly coupled MEMS resonators

This paper presents a numerical study of the impact of process-induced variations on the achievable motional resistance Rx of one-dimensional, cyclic and cross-coupled architectures of electrostatically transduced MEMS resonators operating in the 250 kHz range. Monte Carlo numerical simulations which accounted for up to 0.75% variation in critical resonator feature sizes were initiated on 1, 2, 3, 4, 5 and 9 coupled MEMS resonators for three distinct coupling architectures. Improvements of 100X in the spread of Rx and 2.7X in mean achievable Rx are reported for the case of 9 resonators when implemented in the cross-coupled topology, as opposed to the traditional one-dimensional chain. © 2013 IEEE.

MEMS-based mechanical AGC for oscillator circuits

This paper investigates a nonlinear amplitude saturation behavior in an electrostatically transduced, silicon MEMS disk resonator operating in its secondary elliptical bulk-mode (SEBM) at 3.932 MHz towards its implementation as an all-mechanical automatic gain control (AGC) element. The nonlinear vibration behavior of the SEBM mode is experimentally observed in open-loop testing such that above a threshold small signal drive voltage at a given polarization voltage, the vibration amplitude of the SEBM mode saturates. We also study this nonlinearity in an oscillator circuit designed such that the driving power level at the resonator input can be manually tuned as the circuit operates. The measurements of the voltage amplitudes show a clear transition from the linear to the nonlinear saturation region as the driving power is increased. Short-term frequency stability measurements were also conducted for different v ac and the resulting Allan deviation plots show an improvement in the short-term stability from 1.4 ppb in the linear region to 0.4 ppb in the amplitude saturation region. © 2013 IEEE.

A dual mode SOI CMOS MEMS based thermal conductivity and IR absorption gas sensor

Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700°C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices. © 2013 IEEE.

Sub-kHz RF electrical linewidth from a 10GHz passively mode-locked quantum-dot laser diode

A packaged 10GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narrow 500Hz RF electrical linewidth for passive mode-locking. Single sideband noise spectra show 147fs integrated timing jitter over the 4MHz-80MHz frequency range. © 2009 Optical Society of America.

Delayed-decision making in noisy bistable switches

Bistable switches are frequently encountered in biological systems. Typically, a bistable switch models a binary decision where each decision corresponds to one of the two stable equilibria. Recently, we showed that the global decision-making process in bistable switches strongly depends on a particular equilibrium point of these systems, their saddle point. In particular, we showed that a saddle point with a time-scale separation between its attractive and repulsive directions can delay the decision-making process. In this paper, we study the effects of white Gaussian noise on this mechanism of delayed decision-making induced by the saddle point. Results show that the mean decision-time strongly depends on the balance between the initial distance to the separatrix and the noise strength. © IFAC.

Modular hybrid dilated Mach-Zehnder switch with integrated SOAs for large port count switches

A modular dilated MZI based optical switch with integrated SOAs is demonstrated with excellent -40dB crosstalk/extinction ratio, 3ns switching time and nearly penalty-free operation. Studies show an 8×8 switch with 14dB IPDR for 0.5dB penalty. © 2014 OSA.

Crosstalk reduction in holographic wavelength selective switches based on phase-only LCOS devices

A method to reduce crosstalk is proposed for holographic wavelength selective switches (WSSs) using a customized merit function. A reduction in crosstalk >8 dB is measured when multicasting with a phase-only LCOS device. © OSA 2014.