173 resultados para MODULATION SPECTRUM
Resumo:
The first known experimental demonstrations of a 10 Gb/s hybrid CAP-2/QAM-2 and a 20 Gb/s hybrid CAP-4/QAM-4 transmitter/receiver-based optical data link are performed. Successful transmission over 4.3 km of standard single-mode fiber (SMF) is achieved, with a link power penalty ∼0.4 dBo for CAP-2/QAM-2 and ∼1.5 dBo for CAP-4/QAM-4 at BER=10(-9).
Resumo:
We demonstrate an on-chip all-optical broadband modulation of light in submicron silicon waveguide based on linear free carriers' absorption using side coupling configuration of a pump signal. © 2010 Optical Society of America.
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100 Gb/s PAM4-CAP2 modulation is demonstrated for next-generation datacommunication links. Simulation studies indicate a power budget advantage of 2.5 dBo relative to PAM8 modulation. A real-time experimental demonstration is performed. © OSA 2014.
Resumo:
We demonstrate for the first time coding/decoding for OCDMA networks using electronic transversal filters at 18Gchips/s-a ten-fold improvement over previous demonstrations. The chip rate allows users at Gb/s rates in access applications. © 2007 Optical Society of America.
Resumo:
A new class of 16-ary Amplitude Phase Shift Keying (APSK) coded modulations deemed double-ring PSK modulations best suited for (satellite) nonlinear channels is proposed. Constellation parameters optimization has been based on geometric and information-theoretic considerations. Furthermore, pre- and post-compensation techniques to reduce the nonlinearity impact have been examined. Digital timing clock and carrier phase have been derived and analyzed for a Turbo coded version of the same new modulation scheme. Finally, the performance of state-of the art Turbo coded modulation for this new 16-ary digital modulation has been investigated and compared to the known TCM schemes. It is shown that for the same coding scheme, double-ring APSK modulation outperforms classical 16-QAM and 16-PSK over a typical satellite nonlinear channel due to its intrinsic robustness against the High Power Amplifier (HPA) nonlinear characteristics. The new modulation is shown to be power- and spectrally-efficient, with interesting applications to satellite communications. © 2002 by the American Institute of Aeronautics and Astronautics, Inc.
Resumo:
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.
Resumo:
In this paper, we propose a low complexity and reliable wideband spectrum sensing technique that operates at sub-Nyquist sampling rates. Unlike the majority of other sub-Nyquist spectrum sensing algorithms that rely on the Compressive Sensing (CS) methodology, the introduced method does not entail solving an optimisation problem. It is characterised by simplicity and low computational complexity without compromising the system performance and yet delivers substantial reductions on the operational sampling rates. The reliability guidelines of the devised non-compressive sensing approach are provided and simulations are presented to illustrate its superior performance. © 2013 IEEE.
Resumo:
Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.