Comparison of different scheduling techniques for H-infinity controllers

Several approaches to designing schedule H-infinity control systems are compared. These include a controller switching approach and also parameter scheduling of an observer representation of the controller. They are illustrated by application to a Generic VSTOI. Aircraft Model (GVAM) supplied by The Royal Aerospace Establishment (RAE) at Bedford. The switched design has been tested on the simulator at RAE Bedford. The linear H-infinity designs make use of a loop-shaping followed by robust stabilisation to additive perturbations of a normalised coprime factorisation of the shaped plans. The different scheduling approaches are compared with respect to achieved robust stability levels. performance and complexity of implementation.

Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Numerical modelling of lubricated foil rolling

A model of lubricated cold strip rolling (1, 2) is extended to the thin foil regime. The model considers the evolution of asperity geometry and lubricant pressure through the bite, treating the strip using a conventional slab model. The elastic deflections of the rolls are coupled into the problem using an elastic finite element model. Friction between the roll and the asperities on the strip is modelled using the Coulomb and Tresca friction factor approaches. The shear stress in the Coulomb friction model is limited to the shear yield stress of the strip. A novel modification to these standard friction laws is used to mimic slipping friction in the reduction regions and sticking friction in a central neutral zone. The model is able to reproduce the sticking and slipping zones predicted by Fleck et al. (3). The variation of rolling load, lubricant film thickness and asperity contact area with rolling speed is examined, for conditions typical of rolling aluminium foil from a thickness of 50 to 25 μm. T he contact area and hence friction rises as the speed drops, leading to a large increase in rolling load. This increase is considerably more marked using Coulomb friction as compared with the friction factor approach. Forward slip increases markedly as the speed falls and a significant sticking region develops.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

Analytical techniques for indentation of viscoelastic materials

Indentation of linearly viscoelastic materials is explored using elastic-viscoelastic correspondence analysis for both conical-pyramidal and spherical indentation. Boltzmann hereditary integrals are used to generate displacement-time solutions for loading at constant rate and creep following ramp loading. Experimental data for triangle- and trapezoidal-loading are examined for commercially-available polymers and compared with analytical solutions. Emphasis is given to the use of multiple experiments to test the fidelity and predictive capability of the obtained material creep function. Plastic deformation occurs in sharp indentation of glassy polymers and is found to complicate the viscoelastic analysis. A new method is proposed for estimating a material time-constant from peak displacement or hardness data obtained in pyramidal indentation tests performed at different loading rates.

Assessing seasonal precipitation trends in India using parametric and non-parametric statistical techniques

This paper provides an insight into the long-term trends of the four seasonal and annual precipitations in various climatological regions and sub-regions in India. The trends were useful to investigate whether Indian seasonal rainfall is changing in terms of magnitude or location-wise. Trends were assessed over the period of 1954-2003 using parametric ordinary least square fits and non-parametric Mann-Kendall technique. The trend significance was tested at the 95% confidence level. Apart from the trends for individual climatological regions in India and the average for the whole of India, trends were also specifically determined for the possible smaller geographical areas in order to understand how different the trends would be from the bigger spatial scales. The smaller geographical regions consist of the whole southwestern continental state of Kerala. It was shown that there are decreasing trends in the spring and monsoon rainfall and increasing trends in the autumn and winter rainfalls. These changes are not always homogeneous over various regions, even in the very short scales implying a careful regional analysis would be necessary for drawing conclusions regarding agro-ecological or other local projects requiring change in rainfall information. Furthermore, the differences between the trend magnitudes and directions from the two different methods are significantly small and fall well within the significance limit for all the cases investigated in Indian regions (except where noted). © 2010 Springer-Verlag.

Extended VTS for noise-robust speech recognition

Model compensation is a standard way of improving the robustness of speech recognition systems to noise. A number of popular schemes are based on vector Taylor series (VTS) compensation, which uses a linear approximation to represent the influence of noise on the clean speech. To compensate the dynamic parameters, the continuous time approximation is often used. This approximation uses a point estimate of the gradient, which fails to take into account that dynamic coefficients are a function of a number of consecutive static coefficients. In this paper, the accuracy of dynamic parameter compensation is improved by representing the dynamic features as a linear transformation of a window of static features. A modified version of VTS compensation is applied to the distribution of the window of static features and, importantly, their correlations. These compensated distributions are then transformed to distributions over standard static and dynamic features. With this improved approximation, it is also possible to obtain full-covariance corrupted speech distributions. This addresses the correlation changes that occur in noise. The proposed scheme outperformed the standard VTS scheme by 10% to 20% relative on a range of tasks. © 2006 IEEE.