Computational mechanisms of sensorimotor control.

In order to generate skilled and efficient actions, the motor system must find solutions to several problems inherent in sensorimotor control, including nonlinearity, nonstationarity, delays, redundancy, uncertainty, and noise. We review these problems and five computational mechanisms that the brain may use to limit their deleterious effects: optimal feedback control, impedance control, predictive control, Bayesian decision theory, and sensorimotor learning. Together, these computational mechanisms allow skilled and fluent sensorimotor behavior.

Thermal-creep analysis of concrete bridges

The creep effects on sequentially built bridges are analysed by the theory of thermal creep. Two types of analysis are used: time dependent and steady state. The traditional uniform creep analysis is also introduced briefly. Both simplified and parabolic normalising creep-temperature functions are used in the analysis for comparison. Numerical examples are presented, calculated by a computer program based on the theory of thermal creep and using the displacement method. It is concluded that different assumptions within thermal creep can lead to very different results when compared with uniform creep analysis. The steady-state analysis of monolithically built structures can serve as a limit to evaluate total creep effects for both monolithically and sequentially built structures. The importance of the correct selection of the normalising creep-temperature function is demonstrated.

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.