Inhibitory Synaptic Plasticity - Spike timing dependence and putative network function.

While the plasticity of excitatory synaptic connections in the brain has been widely studied, the plasticity of inhibitory connections is much less understood. Here, we present recent experimental and theoretical □ndings concerning the rules of spike timing-dependent inhibitory plasticity and their putative network function. This is a summary of a workshop at the COSYNE conference 2012.

Compact multimode polymer waveguide bends for board-level optical interconnects

Multimode polymer waveguides are promising for use in board-level optical interconnects. In recent years, various on-board optical interconnection architectures have been demonstrated making use of passive routing waveguide components. In particular, 90° bends have played important roles in complex waveguide layouts enabling interconnection between non co-linear points on a board. Due to the dimensions and index step of the waveguides typically used in on-board optical interconnects, low-loss bends are typically limited to a radius of ∼ 10 mm. This paper therefore presents the design and fabrication of compact low-loss waveguide bends with reduced radii of curvature, offering significant reductions in the required areas for on-board optical circuits. The proposed design relies on the exposure of the bend section to the air, achieving tighter light confinement along the bend and reduced bending losses. Simulation studies carried out with ray tracing tools and experimental results from polymer samples fabricated on FR4 are presented. Low bending losses are achieved from the air-exposed bends up to 4 mm of radius of curvature, while an improvement of 14 μm in the 1 dB alignment tolerances at the input of these devices (fibre to waveguide coupling) is also obtained. Finally, the air-exposed bends are employed in an optical bus structure, offering reductions in insertion loss of up to 3.8 dB. © 2013 IEEE.

IGBT converters conducted EMI analysis by controlled multiple-slope switching waveform approximation

IGBTs realise high-performance power converters. Unfortunately, with fast switching of the IGBT-free wheel diode chopper cell, such circuits are intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally needed on the load and supply side. In order to design these EMI suppression components, designers need to predict the EMI level with reasonable accuracy for a given structure and operating mode. Simplifying the transient IGBT switching current and voltage into a multiple slope switching waveform approximation offers a feasible way to estimate conducted EMI with some accuracy. This method is dependent on the availability of high-fidelity measurements. Also, that multiple slope approximation needs careful and time-costly IGBT parameters optimisation process to approach the real switching waveform. In this paper, Active Voltage Control Gate Drive(AVC GD) is employed to shape IGBT switching into several defined slopes. As a result, Conducted EMI prediction by multiple slope switching approximation could be more accurate, less costly but more friendly for implementation. © 2013 IEEE.

Thyristors

Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type material (i.e. three p-n junctions) comprising its main power handling section. In contrast to the linear relation which exists between load and control currents in a transistor, the thyristor is bistable. The control terminal of the thyristor, called the gate (G) electrode, may be connected to an integrated and complex structure as a part of the device. Thyristors are used to approximate ideal closed (no voltage drop between anode and cathode) or open (no anode current flow) switches for control of power flow in a circuit. This differs from low-level digital switching circuits that are designed to deliver two distinct small voltage levels while conducting small currents (ideally zero). Thyristor circuits must have the capability of delivering large currents and be able to withstand large externally applied voltages. All thyristor types are controllable in switching from a forward-lockingstate (positive potential applied to the anode with respect to the cathode, with correspondingly little anode current flow) into a forward-conduction state (large forward anode current flowing, with a small anode-cathode potential drop). Most thyristors have the characteristic that after switching from a forward-blocking state into the forward-conduction state, the gate signal can be removed and the thyristor will remain in its forward-conduction mode. This property is termed "latching" and is an important distinction between thyristors and other types of power electronic devices. © 2007 Elsevier Inc. All rights reserved.

Experimental LVRT performance of a 250 kW brushless DFIG

Nowadays, all new wind turbine generators have to meet strict grid codes, especially riding through certain grid faults, such as a low voltage caused by grid short circuits. The Low-Voltage Ride Through (LVRT) capability has become a key issue in assessing the performance of wind turbine generators. The mediumspeed Brushless DFIG in combination with a simplified two-stage gearbox shows commercial promise as a replacement for conventional DFIGs due to its lower cost and higher reliability. Furthermore, the Brushless DFIG has significantly improved LVRT performance when compared with the DFIG due to its inherent design characteristics. In this paper, the authors propose a control strategy for the Brushless DFIG to improve its LVRT performance. The controller has been implemented on a prototype 250 kW Brushless DFIG and test results show that LVRT is possible without a need for any external protective hardware such as a crowbar.

A novel modeling approach for design studies of brushless doubly fed induction generator based on magnetic equivalent circuit

Brushless doubly fed induction generator (BDFIG) has substantial benefits, which make it an attractive alternative as a wind turbine generator. However, it suffers from lower efficiency and larger dimensions in comparison to DFIG. Hence, optimizing the BDFIG structure is necessary for enhancing its situation commercially. In previous studies, a simple model has been used in BDFIG design procedure that is insufficiently accurate. Furthermore, magnetic saturation and iron loss are not considered because of difficulties in determination of flux density distributions. The aim of this paper is to establish an accurate yet computationally fast model suitable for BDFIG design studies. The proposed approach combines three equivalent circuits including electric, magnetic and thermal models. Utilizing electric equivalent circuit makes it possible to apply static form of magnetic equivalent circuit, because the elapsed time to reach steady-state results in the dynamic form is too long for using in population-based design studies. The operating characteristics, which are necessary for evaluating the objective function and constraints values of the optimization problem, can be calculated using the presented approach considering iron loss, saturation, and geometrical details. The simulation results of a D-180 prototype BDFIG are compared with measured data in order to validate the developed model. © 1986-2012 IEEE.

Shaping pulse transitions by active voltage control for reduced EMI generation

High-performance power switching devices (IGBT/MOSFET) realise high-performance power converters. Unfortunately, with a high switching speed of the IGBT or MOSFET freewheel diode chopper cell, the circuit has intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally demanded on the load and supply side. Although an S-shaped voltage transient with a high order of derivation eliminates the discontinuity and could suppress HF spectrum of EMI emissions, a practical control scheme is still under development. In this paper, Active Voltage Control (AVC) is applied to successfully define IGBT switching dynamics with a smoothed Gaussian waveform so a reduced EMI can be achieved without extra EMI suppression devices. © 2013 IEEE.

Oxide electronics for imaging and displays

Despite material weaknesses, considerable progress has been made in designing large area systems such as displays and imaging arrays. This talk will address the various large area technologies, and in particular, review amorphous oxide semiconductors and associated design approaches, along with driving schemes for displays, imaging and other applications. © 2013 IEEE.

Parabolic tapered photonic crystal cavity in silicon

We demonstrate the design, fabrication, transmission spectrum measurement, and near-field characterization of a parabolic tapered one-dimensional photonic crystal cavity in silicon. The results shows a relatively high quality factor (∼43 000), together with a small modal volume of ∼ 1. 1 (λ/n) 3. Moreover, the design allows repeatable device fabrication, as evident by the similar characteristics obtained for several tens of devices that were fabricated and tested. These demonstrated 1D PhC cavities may be used as a building block in integrated photonic circuits for optical on-chip interconnects and sensing applications. © 2012 American Institute of Physics.

800V lateral IGBT in bulk Si for low power compact SMPS applications

An 800V rated lateral IGBT for high frequency, low-cost off-line applications has been developed. The LIGBT features a new method of adjusting the bipolar gain, based on a floating N+ stripe in front of the P+ anode/drain region. The floating N+ layer enhances the carrier recombination at the anode/drain side of the drift region resulting in a very significant decrease in the turn-off speed and substantially lower overall losses. Switching speeds as low as 140ns at 25oC and 300ns at 125oC have been achieved with corresponding equivalent Rdson at 125oC below 90mω.cm2. A fully operational AC-DC converter using a controller with an integrated LIGBT+depletion mode MOSFET chip has been designed and qualified in plastic SOP8 packages and used in 5W, 65kHz SMPS applications. The device is fabricated in 0.6μm bulk silicon CMOS technology without any additional masking steps. © 2013 IEEE.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding the cascode switching process

Cascode circuits are useful for driving normally-on wide-bandgap devices, but the switching process must be properly understood to optimise their design. Little detailed consideration has previously been given to this. This paper proposes an idealised mathematical description of the cascode switching process, which is used to show that the stray inductance between the two devices plays a critical role in switching. This idealised model is used to propose methods for optimising cascode performance in different applications. © 2013 IEEE.

Optimal recall from bounded metaplastic synapses: predicting functional adaptations in hippocampal area CA3.

A venerable history of classical work on autoassociative memory has significantly shaped our understanding of several features of the hippocampus, and most prominently of its CA3 area, in relation to memory storage and retrieval. However, existing theories of hippocampal memory processing ignore a key biological constraint affecting memory storage in neural circuits: the bounded dynamical range of synapses. Recent treatments based on the notion of metaplasticity provide a powerful model for individual bounded synapses; however, their implications for the ability of the hippocampus to retrieve memories well and the dynamics of neurons associated with that retrieval are both unknown. Here, we develop a theoretical framework for memory storage and recall with bounded synapses. We formulate the recall of a previously stored pattern from a noisy recall cue and limited-capacity (and therefore lossy) synapses as a probabilistic inference problem, and derive neural dynamics that implement approximate inference algorithms to solve this problem efficiently. In particular, for binary synapses with metaplastic states, we demonstrate for the first time that memories can be efficiently read out with biologically plausible network dynamics that are completely constrained by the synaptic plasticity rule, and the statistics of the stored patterns and of the recall cue. Our theory organises into a coherent framework a wide range of existing data about the regulation of excitability, feedback inhibition, and network oscillations in area CA3, and makes novel and directly testable predictions that can guide future experiments.

A 40 Gb/s optical bus for optical backplane interconnections

Optical technologies have received large interest in recent years for use in board-level interconnects. Polymer multimode waveguides in particular, constitute a promising technology for high-capacity optical backplanes as they can be cost-effectively integrated onto conventional printed circuit boards (PCBs). This paper presents the first optical backplane demonstrator based on the use of PCB-integrated polymer multimode waveguides and a regenerative shared bus architecture. The backplane demonstrator is formed with commercially-available low-cost electronic and photonic components onto conventional FR4 substrates and comprises two opto-electronic (OE) bus modules interconnected via a prototype regenerator unit. The system enables interconnection between the connected cards over four optical channels, each operating at 10 Gb/s. Bus extension is achieved by cascading OE bus modules via 3R regenerator units, overcoming therefore the inherent limitation of optical bus topologies in the maximum number of cards that can be connected to the bus. Details of the design, fabrication, and assembly of the different parts of this optical bus backplane are presented and related optical and data transmission characterisation studies are reported. The optical layer of the OE bus modules comprises a four-channel three-card waveguide layout that is compatible with VCSEL/PD arrays and ribbon fibres. All on-board optical paths exhibit insertion losses below 13 dB and intra-channel crosstalk lower than -29 dB. The robustness of the signal distribution from the bus inputs to all respective bus output ports in the presence of input misalignment is demonstrated, while 1 dB input alignment tolerances of approximately ±10 μm are obtained. The electrical layer of the OE bus modules comprises the essential driving circuitry for 1×4 VCSEL and PD arrays and the corresponding control and power regulation circuits. The interface between the optical and electrical layers of the bus modules is achieved with simple OE connectors that enable end-fired optical coupling into and out of the on-board polymer waveguides. The backplane demonstrator achieves error-free (BER < 10-12) 10 Gb/s data transmission over each optical channel, enabling therefore, an aggregate interconnection capacity of 40 Gb/s between any connected cards. © 1983-2012 IEEE.

Amorphous silicon thin film transistor biosensing system

Electronic systems are a very good platform for sensing biological signals for fast point-of-care diagnostics or threat detection. One of the solutions is the lab-on-a-chip integrated circuit (IC), which is low cost and high reliability, offering the possibility for label-free detection. In recent years, similar integrated biosensors based on the conventional complementary metal oxide semiconductor (CMOS) technology have been reported. However, post-fabrication processes are essential for all classes of CMOS biochips, requiring biocompatible electrode deposition and circuit encapsulation. In this work, we present an amorphous silicon (a-Si) thin film transistor (TFT) array based sensing approach, which greatly simplifies the fabrication procedures and even decreases the cost of the biosensor. The device contains several identical sensor pixels with amplifiers to boost the sensitivity. Ring oscillator and logic circuits are also integrated to achieve different measurement methodologies, including electro-analytical methods such as amperometric and cyclic voltammetric modes. The system also supports different operational modes. For example, depending on the required detection arrangement, a sample droplet could be placed on the sensing pads or the device could be immersed into the sample solution for real time in-situ measurement. The entire system is designed and fabricated using a low temperature TFT process that is compatible to plastic substrates. No additional processing is required prior to biological measurement. A Cr/Au double layer is used for the biological-electronic interface. The success of the TFT-based system used in this work will open new avenues for flexible label-free or low-cost disposable biosensors. © 2013 Materials Research Society.