Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.

Hybrid model predictive control applied to switching control of burner load for a compact marine boi

This paper discusses the application of hybrid model predictive control to control switching between different burner modes in a novel compact marine boiler design. A further purpose of the present work is to point out problems with finite horizon model predictive control applied to systems for which the optimal solution is a limit cycle. Regarding the marine boiler control the aim is to find an optimal control strategy which minimizes a trade-off between deviations in boiler pressure and water level from their respective setpoints while limiting burner switches.The approach taken is based on the Mixed Logic Dynamical framework. The whole boiler systems is modelled in this framework and a model predictive controller is designed. However to facilitate on-line implementation only a small part of the search tree in the mixed integer optimization is evaluated to find out whether a switch should occur or not. The strategy is verified on a simulation model of the compact marine boiler for control of low/high burner load switches. It is shown that even though performance is adequate for some disturbance levels it becomes deteriorated when the optimal solution is a limit cycle. Copyright © 2007 International Federation of Automatic Control All Rights Reserved.

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched “on” and “off” reversibly in 600 µs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times.

Comparative switching behaviour of silicon transistors and practical silicon carbide transistors

The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable stress on the device and increases the transient power dissipation. A precise comparison of switching behaviour of Si and SiC devices on similar terms is the novelty of our work. The cascode is found to be an attractive fast switching device, capable of operating in two different configurations whose switching equivalent circuits are proposed here. The effect of limited dv/dt of the Si-MOSFET on the switching of the SiC-JFET in a cascode is also critically analysed.

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched on and off reversibly in 600 μs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times. © 2011 American Institute of Physics.

Energy recovery from high-frequency clocks using DC-DC converters

Large digital chips use a significant amount of energy to distribute a multi-GHz clock. By discharging the clock network to ground every cycle, the energy stored in this large capacitor is wasted. Instead, the energy can be recovered using an on-chip DC-DC converter. This paper investigates the integration of two DC-DC converter topologies, boost and buck-boost, with a high-speed clock driver. The high operating frequency significantly shrinks the required size of the L and C components so they can be placed on-chip; typical converters place them off-chip. The clock driver and DC-DC converter are able to share the entire tapered buffer chain, including the widest drive transistors in the final stage. To achieve voltage regulation, the clock duty cycle must be modulated; implying only single-edge-triggered flops should be used. However, this minor drawback is eclipsed by the benefits: by recovering energy from the clock, the output power can actually exceed the additional power needed to operate the converter circuitry, resulting in an effective efficiency greater than 100%. Furthermore, the converter output can be used to operate additional power-saving features like low-voltage islands or body bias voltages. ©2008 IEEE.

A 660MHz ZVS DC-DC converter using gate-driver charge-recycling in 0.18μm CMOS with an integrated output filter

The design and manufacture of a prototype chip level power supply is described, with both simulated and experimental results. Of particular interest is the inclusion of a fully integrated on-chip LC filter. A high switching frequency of 660MHz and the design of a device drive circuit reduce losses by supply stacking, low-swing signaling and charge recycling. The paper demonstrates that a chip level converter operating at high frequency can be built and shows how this can be achieved, using zero voltage switching techniques similar to those commonly used in larger converters. Both simulations and experimental data from a fabricated circuit in 0.18μm CMOS are included. The circuit converts 2.2V to 0.75∼1.0V at ∼55mA. ©2008 IEEE.

Ultrafast switching liquid crystals for electro-optic transmissive and reflective displays and microscopic lasers

We report on novel liquid crystals with extremely large flexoelectric coefficients in a range of ultra-fast photonic modes, namely 1) the uniform lying helix, that leads to in-plain switching, birefringence phase devices with 100 μs switching times at low fields, i.e.2-5 V/μm, and analogue or grey scale capability, 2) the uniform standing helix, using planar surface alignment and in-plane fields, with sub ms response times and optical contrasts in excess of 5000:1 with a perfect optically isotropic or black "off state", 3) the wide temperature range blue phase that leads to field controlled reflective color, 4) chiral nematic optical reflectors electric field tunable over a wide wavelength range and 5) high slope efficiency, wide wavelength range tunable narrow linewidth microscopic liquid crystal lasers. © 2011 Materials Research Society.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Free-space optoelectronic switching cores with MPLS for SANs over WDM ring networks

With increasing demands on storage devices in the modern communication environment, the storage area network (SAN) has evolved to provide a direct connection allowing these storage devices to be accessed efficiently. To optimize the performance of a SAN, a three-stage hybrid electronic/optical switching node architecture based on the concept of a MPLS label switching mechanism, aimed at serving as a multi-protocol label switching (MPLS) ingress label edge router (LER) for a SAN-enabled application, has been designed. New shutter-based free-space multi-channel optical switching cores are employed as the core switch fabric to solve the packet contention and switching path conflict problems. The system-level node architecture design constraints are evaluated through self-similar traffic sourced from real gigabit Ethernet network traces and storage systems. The extension performance of a SAN over a proposed WDM ring network, aimed at serving as an MPLS-enabled transport network, is also presented and demonstrated. © 2012 OSA.