3D FE Analyses of Buried Pipeline with Elbows Subjected to Lateral Loading

This study investigates the interaction between soil and pipeline in sand subjected to lateral ground displacements with emphasis on the peak force exerted to a bended elbow-pipe. A series of three-dimensional (3D) finite-element (FE) analyses were performed in both opening and closing modes of the elbow section for different initial pipe bending angles. To model the mechanical behavior of sands, two soil models were adopted: Mohr-Coulomb and Nor-Sand soil model. Investigations also included the effects of pipe embedment depth and soil density. Results show that the opening mode exhibits higher ultimate forces and greater localized deformations than the closing mode. Nondimensional charts that account for pipeline location, bending angle, and soil density are developed. Soil-spring pipeline analyses of an elbow-pipe were performed using modified F-δ soil-spring models based on the 3D FE results and were compared to the findings of conventional spring model analyses using the standard two-dimensional soil-spring model. Results show that the pipe strain does not change in the closing mode case. However, in the opening mode case, the pipe strain computed by the modified analysis is larger than that by the conventional analysis and the difference is more pronounced when the pipe stiffness is stiffer. © 2011 American Society of Civil Engineers.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.