Experimental and theoretical comparison between static and dynamic torsional soil tests

The dynamic properties of dry Leighton Buzzard sand have been investigated using a resonant column test apparatus. These data are compared with very low frequency cyclic tests on identical specimens of sand. The comparison indicates that the properties of dry sand are independent of frequency. A simple one-dimensional model of kinematic hardening plasticity is used to predict the dynamic behaviour of the sand. The input parameters for this model are based on the results of static tests. These may be conducted on standard laboratory equipment with only minor modifications. The predictions are in good agreement with the measured data.

The modelling of soil plasticity

The modeling of the soil plasticity was discussed and it was shown that the grain breakage is an important factor of the plastic soil behaviour. A reduction of internal coefficient of friction was observed when stress-level was increased. The yield paths of all stress path tests determined by curve fitting were presented.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.